Varian Semiconductor Equipment Associates, Inc.

Axcelis Technologies, Inc.

Eaton Corporation

Entegris, Inc.

Applied Materials, Inc.

Dale K Stone

Julian G Blake

Lyudmila Stone

David E Suuronen

Richard A Cooke

Shigeo Oshiro

D Jeffrey Lischer

Arthur Paul Riaf

Edward D MacIntosh

Frank Sinclair

Christopher R Hatem

Roger Bradford Fish

Steven M Anella

Piero Sferlazzo

Dawei Sun

Klaus Petry

I-Kuan Lin

David J Chipman

Lyudmila Menn

Mary Jones

David Chipman

Robert Becker

Victor M Benveniste

Peter Lawrence Kellerman

Alexander S Perel

Robert J Mitchell

Ashwin Madhukar Purohit

Maria J Anc

Scott C Holden

Steven Donnell

Michel Pharand

Qin Chen

Chandra Venkatraman

Bryan C Lagos

Steve Drummond

James Carroll

Scott T Barusso

Chi-Yang Cheng

Weilin Tu

Ron Serisky

Christopher T Reddy

Gary Rosen

Dave Broyer

Tariq Fasheh

Dave Wiederspahn

A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

Method and apparatus for non line-of-sight doping

A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.

Enhanced substrate temperature measurement apparatus, system and method

Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Platen for reducing particle contamination on a substrate and a method thereof

In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

Diffusion resistant electrostatic clamp

A thermal shield is disclosed that may be disposed between a heated electrostatic chuck and a base. The thermal shield comprises a thermal insulator, such as a polyimide film, having a thickness of between 1 and 5 mils. The polyimide film is coated on one side with a layer of reflective material, such as aluminum. The layer of reflective material may be between 30 and 100 nanometers. The thermal shield is disposed such that the layer of reflective material is closer to the chuck. Because of the thinness of the layer of reflective material, the thermal shield does not retain a significant amount of heat. Further, the temperature of the thermal shield remains far below the glass transition temperature of the polyimide film.

Thermal shield for electrostatic chuck

In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10to about 10ohms per square.

High conductivity electrostatic chuck

An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.

Apparatus for improving temperature uniformity of a workpiece

An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

Triboelectric charge controlled electrostatic clamp

In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 10ohms per square.

High surface resistivity electrostatic chuck

Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a ground pin that extends two regions of a platen that support the substrate. The ground pin may comprise a pin body; and a sleeve comprising an upper portion, a side portion, and a lower portion, the sleeve being configured to fit around the pin body, the sleeve including a fluid channel configured to transport fluid between the upper portion and the lower portion of the sleeve.

Platen ground pin for connecting substrate to ground

A workpiece support, which more effectively cools a textured workpiece is disclosed. A layer is added on top of a workpiece support. This layer is sufficiently soft so as to conform to the textured workpiece. Furthermore, the layer has a dielectric constant such that it does not alter the normal operation of the underlying electrostatic clamp. In some embodiments, the locations of the ground and lift pins are moved to further reduce the leakage of backside gas.

Method of cooling textured workpieces with an electrostatic chuck

A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions.

Method for junction avoidance on edge of workpieces

Growing community of inventors

Lynnfield, MA, United States of America

Dale K Stone