International Business Machines Corporation

Other

Lenovo (singapore) Pte. Ltd.

Dale J Pearson

Paul William Coteus

Kevin Charles Gower

Gareth Geoffrey Hougham

Shawn Anthony Hall

John J Ellis-Monaghan

James William Adkisson

Mark David Jaffe

Scott Kevin Reynolds

Mark B Ketchen

Chao-Kun Hu

Dennis L Rogers

Cyprian Emeka Uzoh

Hariklia Deligianni

Russell Alan Budd

Hon-Sum Philip Wong

Panayotis Constantinou Andricacos

James M Harper

George L Chiu

Manjul Bhushan

King-Ning Tu

Sudhir Muniswamy Gowda

John Edward Cronin

Charles W Koburger, Iii

John Peter Karidis

William Joseph Gallagher

Stephen Ellinwood Luce

Rama Nand Singh

Carter W Kaanta

Mark A Jaso

Jungwook Yang

Alan W Kleinsasser

Mary Yvonne Lanzerotti

Susan F Cronin

Zhong John Deng

A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.

CMOS imager photodiode with enhanced capacitance

A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Planar array contact memory cards

A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.

A vacuum system for wastewater removal and filtration, comprising: (1) at least one velocity reducing gravity separator, comprising: (a) a water input line; (b) a water velocity reduction mechanism at an end of the water input line; (c) a settling tank; and (d) a water output line; and (2) at least one negative pressure filter pump, comprising: (a) a water input line; (b) a water velocity reduction mechanism at an end of the water input line; (c) a filtration tank; (d) a filter cloth in the filtration tank; (e) a sump pump disposed on an opposite side of the filter cloth from the water input line; (f) a water output line connected to the sump pump; and (g) an air vacuum exit line.

Multiphase separation vacuum system

Techniques for inline measurement of a switching history time constant in an integrated circuit device are provided. A series of pulses is launched into a first stage of a delay chain comprising a plurality of delay stages connected in series and having a length greater than a decay length of at least an initial one of the series of pulses, such that the at least initial one of the series of pulses does not appear at a second stage of the delay chain. An amount of time between the launching of the initial one of the series of pulses and the appearance of at least one of the series of pulses at the second stage of the delay chain is determined. The switching history time constant is calculated as a function of a number of stages traversed by the at least one pulse, the determined amount of time, and the decay length of the at least initial one of the series of pulses based at least in part on a switching history of the integrated circuit device.

Methods and apparatus for determining a switching history time constant in an integrated circuit device

An image capture system for mobile communications systems includes an imaging device for capturing optical image data and a data transfer apparatus coupled to a communications device communications device for transferring the optical image data to the communications device for transmittal over a communications network.

Image capture system for mobile communications

A method for characterizing a change in delay induced by a switching history of a circuit includes the steps of generating a first signal having a pulse width that is selectively adjustable, the first signal having a first edge and a second edge associated therewith, the first and second edges being opposite in polarity with respect to one another; generating a second signal having a first switch delay characteristic of the first edge of the first signal and a second switch delay characteristic of the second edge of the first signal, wherein the pulse width of the first signal is less than the first switch delay associated with the second signal; varying the pulse width of the first signal; monitoring the second signal; determining a value of the pulse width that defines a boundary of when the second signal is present and when the second signal is not present; and determining a ratio of the value of the pulse width that defines the boundary to the first switch delay and/or the second switch delay, whereby the change in delay induced by the switching history of the circuit to be characterized is a function of the ratio.

Method and apparatus for characterizing switching history impact

In an illustrative embodiment, an instant camera is provided which includes an imager for receiving an image of an object to be photographed. The imager outputs a signal corresponding to the received image, and a memory device stores the signal. A printer prints instant film photographs corresponding to received or stored images, and has the capability to print at least one image on a single piece of instant film. A preview unit has at least one display for displaying an image corresponding to a received or stored image. A controller, in communication with the imager, the memory device, the printer, and the preview unit, controls the transfer of the signal from the imager to the memory device, from the memory device to the printer, and from the memory device to the preview unit.

Digital instant camera having a printer

A method of making Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin is disclosed for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

Method of making copper alloys for chip and package interconnections

Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

Copper alloys for chip and package interconnections

Growing community of inventors

Bedford Hills, NY, United States of America

Dale J Pearson