Globalfoundries Inc.

Globalfoundries U.S. Inc.

Daisy A Vaughn

Anthony K Stamper

Zhong-Xiang He

Stephen R Bosley

Steven M Shank

Thai Doan

The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

Tight pitch wirings and capacitor(s)

The present disclosure relates to semiconductor structures and, more particularly, to deep trench isolation structures and methods of manufacture. The structure includes: at least one gate structure on a substrate; an interlevel dielectric material above the substrate; and a trench isolation structure extending into the substrate adjacent to the at least one gate structure and terminating in the interlevel dielectric material above the substrate.

Deep trench isolation structures

Growing community of inventors

Stowe, VT, United States of America

Daisy A Vaughn