Fujifilm Corporation

Daisuke Yokoyama

Toshiaki Fukunaga

Tetsuro Mitsui

Takanori Hioki

Itaru Osaka

A photoelectric conversion device comprising a photoelectric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.

Photoelectric conversion device and solid-state imaging device

A photoelectric conversion layer comprising a compound represented by the following formula (I): wherein V, V, Vand Veach independently represents a hydrogen atom or a substituent.

Photoelectric conversion layer, photoelectric conversion device and imaging device, and method for applying electric field thereto

A photoelectric conversion device comprising a photoelectric conversion part including a first electrode, a second electrode opposing to the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a smoothing layer for reducing roughness of a surface of the photoelectric conversion layer is provided between the first electrode or the second electrode and the photoelectric conversion layer.

A photoelectric conversion device comprising a photo-electric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.

A photoelectric conversion device comprising a lower electrode, an upper electrode opposing to the lower electrode and a photoelectric conversion layer provided between the lower electrode and the upper electrode, the photoelectric conversion device being for collecting a photocurrent upon application of a bias voltage between the lower electrode and the upper electrode, wherein the upper electrode works as an electrode in a light incident side, the upper electrode is transparent, and the lower electrode is a metallic electrode having a function to reflect light.

Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device

A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.

Color sensor and color image pickup method

The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.

Color light receiving device and image pickup device

A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

A photoelectric conversion device including a photoelectric conversion part including a pair of electrodes and a photoelectric conversion layer provided between the pair of electrodes, wherein the photoelectric conversion part further includes a first charge blocking layer for reducing an injection of a charge into the photoelectric conversion layer from one of the pair of electrodes when a voltage is applied between the pair of electrodes, the first charge blocking layer being provided between the one of the pair of electrodes and the photoelectric conversion layer; and the first charge blocking layer has a relative dielectric constant larger than a relative dielectric constant of the photoelectric conversion layer.

Growing community of inventors

Kanagawa, Japan

Daisuke Yokoyama