Kyocera Corporation

Daisuke Ueyama

Katsuaki Masaki

Yutaka Kuba

Chiaki Domoto

Shinichi Abe

Chiaki Doumoto

Kouji Miyamoto

Yuuichiro Hayashi

Etsuro Shimizu

Takeshi Kamikawa

Yuichiro Hayashi

A gas collection device is installed in a toilet including a toilet seat and a toilet bowl. The gas collection device includes a flow path connected to a predetermined tank, and an introduction portion that introduces a sample gas into the flow path. The introduction portion is located between the toilet seat and the toilet bowl, or located inside or above the toilet seat. The introduction portion does not protrude toward an inside of the toilet bowl from a rim portion of the toilet bowl when located between the toilet seat and the rim portion. The introduction portion does not protrude toward the inside of the toilet bowl from the toilet seat when located inside or above the toilet seat.

Gas collection device and gas detection system

A gas detection system includes a sensor unit that outputs a voltage corresponding to a concentration of a specific gas, a supply unit, and a control unit. The supply unit is capable of supplying a sample gas and a purge gas to the sensor unit. The control unit controls the supply unit to alternately supply the sample gas and the purge gas to the sensor unit. The control unit acquires a voltage waveform output by the sensor unit and detects a type and concentration of a gas contained in the sample gas, using a multiple regression analysis using characteristics of the voltage waveform as explanatory variables.

Gas detection system for detecting a type and concentration of a gas in a sample gas

A gas detection device includes a flow path in which a gas flows in a predetermined direction, at least one first-type gas sensor that includes a heater for heating the gas, and at least one second-type gas sensor that does not include a heater for heating the gas. The first-type gas sensor is positioned upstream of the second-type gas sensor in the flow path.

Gas detection device

A light emitting element housing package of the present disclosure includes a base part including a first surface including a first recessed part for mounting a light emitting element. Surface roughness Sa of at least such a region of a bottom surface of the first recessed part that is opposite to a light emitting element mounted on the first recessed part is smaller than surface roughness Sa of a region other than the first recessed part of the first surface. Further, a light emitting device of the present disclosure includes the light emitting element housing package and a light emitting element housed in the light emitting element housing package. Further, a light emitting module of the present disclosure includes the light emitting device and a module substrate on which the light emitting device is mounted.

Light emitting element housing package, light emitting device, and light emitting module

A multipiece element storage package of the present disclosure includes: a mother substrate which includes first element storage package regions, second element storage package regions, a dummy region, a first surface, and a second surface; a first stem electrode disposed in a part of the dummy region which part is in the first surface; and a second stem electrode disposed on the second surface. The first element storage package regions and the second element storage package regions each include a frame body disposed on the first surface, a first wiring conductor disposed on the first surface, and including one end located inside the frame body and the other end connected to the first stem electrode, and a second wiring conductor including one end which is located on the first surface and inside the frame body and the other end which is connected to the second stem electrode.

Multipiece element storage package and multipiece optical semiconductor device

A method for producing a crystal, according to the present invention, where the lower surfaceB of a seed crystalwhich is rotatably arranged and made of silicon carbide is brought into contact with a solutionof silicon solvent containing carbon in a cruciblewhich is rotatably arranged and the seed crystalis pulled up and a crystal of silicon carbide is grown from the solutionon the lower surfaceB of the seed crystalcomprising the steps of bringing the lower surfaceB of the seed crystalinto contact with the solutionin a contact step, rotating the seed crystalin a seed crystal rotation step, rotating the cruciblein a crucible rotation step, and stopping rotation of the cruciblewhile the seed crystalis rotated in the state in which the lower surfaceB of the seed crystalis in contact with the solutionin a deceleration step.

Method for producing crystal

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Seed crystal holder for growing a crystal by a solution method

A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Growing community of inventors

Kyoto, Japan

Daisuke Ueyama