Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electronics Corporation

Sixpoint Materials, Inc.

Daisuke Ueda

Tsuyoshi Tanaka

Tetsuzo Ueda

Yasuhiro Uemoto

Manabu Yanagihara

Hidetoshi Ishida

Shigeru Ido

Hiroshi Kido

Akinori Hiramatu

Hiroaki Ueno

Kazutoshi Onozawa

Masahiro Hikita

Yutaka Hirose

Shuichi Nagai

Hidetoshi Furukawa

Kaoru Inoue

Tatsuo Morita

Masaaki Yuri

Junichi Hasegawa

Tomohiro Murata

Takeshi Fukuda

Tadao Hashimoto

Masahiro Ishida

Takeshi Kamoi

Toshinobu Matsuno

Hidekazu Umeda

Shinichi Takigawa

Nobuyuki Otsuka

Hiroyuki Sakai

Katsunori Nishii

Daisuke Yamahara

Katsushi Seki

Masaaki Nishijima

Naohiro Tsurumi

Atsushi Noma

Kazuo Miyatsuji

Takumi Yamaguchi

Shinji Yoshida

Mitsuyoshi Mori

Masahiro Ogawa

Yoshito Ikeda

Kazuhiro Yahata

Yoshiharu Anda

Toshikazu Onishi

Kenichi Inoue

Yasufumi Kawai

Yukio Iwasaki

Kenichi Matsuda

Atsuhiko Kanda

Takeshi Fukui

Yoshiro Oishi

Norihisa Mino

Yoshiyuki Matsunaga

Yasuhiro Yamada

Akihiro Sakai

Yuka Yamada

Junji Hirase

Xinbing Liu

Tsutomu Kanno

Yoshiaki Hasegawa

Takahiro Yokoyama

Hirokazu Shimizu

Shigeo Yoshii

Yorito Ota

Kohei Takahashi

Ming Li

Atsushi Omote

Toru Okino

Susumu Koike

Satoshi Nakazawa

Kimiaki Toshikiyo

Yuichi Inaba

Yuji Kudoh

Toshiyuki Takizawa

Akinori Hiramatsu

Mitsuru Nishitsuji

Tomoya Uda

Noboru Negoro

Yuuichi Inaba

Hiromitsu Takagi

Hisayoshi Matsuo

Tatsuya Tanigawa

Hitoshi Taya

Katsumi Sugiura

Tomoaki Tojo

Hiroshi Takenaka

Taku Goubara

The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Electronic device using group III nitride semiconductor and its fabrication method

An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.

Imaging device including semiconductor substrate and unit pixel cell

A control circuit is configured to convert a DC voltage that is outputted from a DC power supply to a square wave voltage by switching the switching element according to a PWM signal having a duty ratio that corresponds to a light modulation level of the light source unit, and cause the square wave voltage to be outputted to the light source unit. The control circuit includes a voltage controller configured to control an operating voltage for operating the switching element such that at least one of a rising time and a falling time of a current that flows through the switching element is 1 microsecond or more.

Light modulation controller, lighting system, and equipment instrument

A high-frequency transmission device includes first and second resonators as ring-shaped wires each having an opening part at a part thereof, first and second input/output terminals each electrically connected to both resonators, a first ground shield formed on a plane different from planes on which both resonators are arranged, a second ground shield formed on a plane different from the planes on which both resonators and the first ground shield are arranged, and first and second ground wires each formed to surround peripheries of both resonators. The ground shields and the ground wires are respectively connected to each other. A dielectric wire is present between both ground wires, and the ground wires are not electrically connected to each other.

Electromagnetic resonant coupler and high-frequency transmission device

The light source unit includes a light source circuit including N (N&#x2267;3) pairs of a light source group including one or more solid light emitting elements and a constant current circuit connected in series with the light source group to keep, constant, current flowing through the light source group, a full-wave rectification circuit for performing full-wave rectification on AC voltage, and a control circuit. The first pair is connected to the full-wave rectification circuit. The k-th (2&#x2266;k&#x2266;N) pair is connected in parallel with the constant current circuit of the (k&#x2212;1)-th pair so that the light source groups of the k-th and (k&#x2212;1)-th pairs are in series. The control circuit terminates operations of the constant current circuits of the N pairs or limits currents flowing through the light source groups of the N pairs in response to detection of light or a signal.

Light source unit and lighting fixture

A control unit of a light source device after activation time is configured to turn on switches respectively connected in series with light sources, in prescribed order. The light source device and a lighting device are configured to transmit characteristics of the light sources, based on a voltage change depending on a pattern of on and off of the switches.

Light source device, lighting device, and luminaire

A lighting device is configured such that only one of a first current control circuit and a charging current control circuit operates in any of operation modes from a first mode to a fourth mode. The lighting device is configured such that the first current control circuit and the charging current control circuit are not included in the same closed circuit.

Lighting device, illumination device, and lighting fixture

A lighting device includes a power conversion unit, an impedance adjustment unit, a first control unit, and a second control unit. The power conversion unit is configured to convert input power to direct-current power used for a light source. The impedance adjustment unit is formed of a series circuit of a resistor element and a switch element and is coupled to the light source in parallel, relative to the power conversion unit. The second control unit is configured to cause the power conversion unit to operate, for each burst cycle, for an operation period which is not longer than the burst cycle, and increase and reduce the ratio of the operation period to the burst cycle. The first control unit is configured to make the switch element conductive for a predetermined adjustment period which is not longer than the operation period, during the operation period.

Lighting device and lighting fixture

A gate drive circuit in an aspect of the present disclosure includes a modulated signal generation circuit that generates a first modulated signal, a first isolator that isolatedly transmits the first modulated signal, and a first rectifier circuit that generates a first output signal by rectifying the first modulated signal. The first modulated signal includes a first amplitude, a second amplitude larger than the first amplitude, and a third amplitude larger than the second amplitude. The first output signal includes a first output voltage value according to the first amplitude, a second output voltage value according to the second amplitude, and a third output voltage value according to the third amplitude.

Gate drive circuit

A semiconductor device includes a semiconductor switch, a first rectifier circuit, and a second rectifier circuit. The semiconductor switch, the first rectifier circuit, and the second rectifier circuit are integrated on a common board. On the board, a first output terminal of the first rectifier circuit is coupled to a first gate terminal of the semiconductor switch, and a first output reference terminal of the first rectifier circuit is coupled to a first source terminal of the semiconductor switch. On the board, a second output terminal of the second rectifier circuit is coupled to a second gate terminal of the semiconductor switch, and a second output reference terminal of the second rectifier circuit is coupled to a second source terminal of the semiconductor switch.

Semiconductor device, switching system, and matrix converter

A power semiconductor element includes: a main transistor including a first gate electrode, a first drain electrode, and a first source electrode; a sensor transistor including a second gate electrode, a second drain electrode, and a second source electrode; and a gate switch transistor including a third gate electrode, and a third drain electrode, a third source electrode. The first gate electrode, the second gate electrode, and the third drain electrode are connected, the first drain electrode and the second drain electrode are connected, the first source electrode and the second source electrode are connected via a sensor resistor, the first source electrode and the third source electrode are connected, the second source electrode and the third gate electrode are connected via a switch resistor, and the main transistor, the sensor transistor, and the gate switch transistor are formed with a nitride semiconductor.

Power semiconductor element

A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 &#x3a9;cm or more, and the internal region has a resistivity of 1000 &#x3a9;cm or more.

Nitride semiconductor structure

Growing community of inventors

Osaka, Japan

Daisuke Ueda