Renesas Electronics Corporation

Sony Corporation

Daisuke Taniguchi

Satoshi Eguchi

Manabu Kawashima

Yuya Abiko

Natsuo Yamaguchi

Shigeaki Saito

Properties of a semiconductor device are improved. A semiconductor device having a superjunction structure, in which p-type column regions and n-type column regions are periodically arranged, is configured as follows. Each n-type column region has a vertical section including an n-type epitaxial layer located between trenches and a tapered embedded n-type epitaxial film disposed on a side face of the trench. Each p-type column region includes an embedded p-type epitaxial film disposed within the trench. The tapered embedded n-type epitaxial film is thus provided on the sidewall of the trench in which the p-type column region is to be disposed, thereby the p-type column region is allowed to have an inverted trapezoidal shape, leading to an increase in margin for a variation in concentration of a p-type impurity in the p-type column region. On resistance can be reduced by lateral diffusion of an n-type impurity (for example, As).

Semiconductor device and method of manufacturing the semiconductor device

A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing steps. After embedded epitaxial growth is performed in a state where a hard mask film for forming trenches is present in at least a scribe region of a wafer, primary polishing is performed by using the hard mask film as a stopper, and secondary polishing is then performed after the hard mask film is removed.

Manufacturing method of power MOSFET using a hard mask as a CMP stop layer between sequential CMP steps

An image processing device includes: a first interpolation unit that performs interpolation using pixel information of pixels having a color same as a color of a pixel of attention and present around the pixel of attention; a second interpolation unit that interpolates color information lost in the pixel of attention using color information of the pixels around the pixel of attention; a combining unit that combines outputs of the first and second interpolation units; a first filter that includes a first filter frequency characteristic and detects a first image of a first region; a second filter that includes a second filter frequency characteristic and detects a second image of a second region; and a combination-ratio generating unit that generates a value for determining a combination ratio of the outputs of the first and second interpolation units in the combining unit.

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Kanagawa, Japan

Daisuke Taniguchi