Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Daisuke Suetsugu

Kenichi Yamamoto

Kazuyoshi Honda

Takafumi Okuma

Takaaki Higashida

Norimichi Noguchi

Takashi Imanaka

Toshitada Sato

Daido Komyoji

Katsumi Kashiwagi

Munekazu Nishihara

Masateru Mikami

Hirotaka Hisamura

Takahide Hirasaki

Kenichi Sato

Hiromasa Yagi

Shinya Suzuki

Sadayuki Okazaki

Satoshi Shibutani

Hisao Nagai

Kiyokazu Itoi

Yuko Ogawa

Yuma Kamiyama

Kazuto Fukuda

Motoi Hatanaka

Takeshi Koiwasaki

Kunihiko Bessho

Yasuharu Shinokawa

Toshinari Nitta

Masaaki Tanabe

Miyuki Nagaoka

Yoshinori Shishida

Jun Katsube

Yoshiki Shimata

Shinsuke Itoi

Hisayoshi Watanabe

Seiji Nakashima

Toshiya Hiramatsu

Akira Okuda

Osamu Sengoku

Toru Uchida

Nobutoshi Takagi

Yosimasa Takii

Tatsuya Urakawa

Hiroki Oda

Kenji Toyoshima

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

Laminated ceramic sintered body board for electronic device, electronic device, chip resistor, and method for manufacturing chip resistor

A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

Gas sensor device

The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.

Laminated alumina board for electronic device, electronic device, and chip resistor

A powder supplier, which supplies a powder material to a pressure molding mechanism that continuously generates a molded body, including: a casing having an inlet to which the powder material is supplied and an outlet from which the powder material is discharged; one or a plurality of screws being disposed inside the casing and rotationally driven to transport the powder material in an axial direction; motors being disposed outside the casing and rotationally driving screws; and a regulator being disposed between the screws, and the outlet inside the casing, and regulating a flow of the powder material. The regulator has a rotation shaft perpendicular to the axial direction of the screws, and a width direction of the powder material discharged from the outlet, and being configured to rotate about the rotation shaft.

Powder supplier

A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

Composite nitride-based film structure and method for manufacturing same

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

Sputtering apparatus and sputtering method

A sputtering method of forming a thin film by allowing a target material to react with a gas includes narrowing down film deposition conditions from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.

Sputtering method

To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

Fine particle production apparatus and fine particle production method

Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrateis provided in a vacuum, and the cooling bodyis provided close to a film non-formation surface of the substrate. A thin film is formed by depositing a film forming material on a film formation surface of the substratewhile introducing a cooling gas into between the substrateand the cooling body. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

Method for forming thin film while providing cooling gas to rear surface of substrate

Arnold () includes a recessed portion () for receiving a melt (). The recessed portion () is constituted by an inner wall surface () for converting the melt () into a solidified portion when the inner wall surface () contacts the melt (), and opens in a withdrawal direction (D) of the solidified portion. A curved line formed by a first contour () and a second contour () has a cusp at a position of start points (and). The distance between the first contour () and the second contour () in a width direction (D) increases continuously from an upstream side to a downstream side of the withdrawal direction (D). The shape of the inner wall surface () of the recessed portion () is determined so that a cast rod () can be rotationally displaced clockwise or counterclockwise about an axis passing through a first end point () or a second end point () and perpendicular to a section of the mold

Mold, casting apparatus, and method for producing cast rod

A lithium ion secondary battery including: a positive electrode current collector; a positive electrode active material layer that is provided in contact with the positive electrode current collector; a separator layer that is provided on a side of the positive electrode active material layer on which the positive electrode current collector is not provided; a negative electrode active material layer that is provided on a side of the separator layer on which the positive electrode active material layer is not provided, that primarily contains silicon or tin, and that includes a opposing portion opposing the positive electrode active material layer and a non-opposing portion not opposing the positive electrode active material layer, the opposing portion and the non-opposing portion containing lithium produced by a thin film-forming method; and a negative electrode current collector that is provided on a side of the negative electrode active material layer on which the separator layer is not provided. Thereby, deformation of the negative electrode and deterioration in cycle characteristics accompanied by such deformation can be prevented.

Lithium ion secondary battery

A method of manufacturing a negative electrode for a nonaqueous electrolyte secondary battery includes the following three steps of:

Nonaqueous electrolyte secondary battery and method of manufacturing negative electrode thereof

A capacitor-equipped semiconductor device includes a semiconductor chip having a plurality of electrode terminals; a sheet-like substrate at least having a film capacitor; and a mounting substrate. The mounting substrate is provided on one side thereof with chip connection terminals and ground terminals. The chip connection terminals are disposed to correspond to the electrode terminals of the semiconductor chip. The ground terminals are disposed to correspond to the one electrode terminals of the film capacitor of the sheet-like substrate. The mounting substrate is provided on the other side thereof with external connection terminals connected to the chip connection terminals and the ground terminals and used to mount the mounting substrate on an external substrate.

Semiconductor device having a mounting substrate with a capacitor interposed therebetween

First sheet-like substrate is arranged at a region surrounded by first terminals of male connector and first circuit substrate, and second sheet-like substrate is arranged at a region surrounded by second terminals of female connector and second circuit substrate, and male connector and female connector are fitted together so that a first passive element of first sheet-like substrate and a second passive element of second sheet-like substrate configure a filter circuit.

Electronic circuit connection structure and its manufacturing method

A connecting structure includes a circuit board with a first connection land having a plurality of conductor patterns on the surface thereof, a second connection land disposed in a position opposite to the first connection land of the circuit board, and a flexible board including an insulating layer formed so as to surround at least a part of outer periphery of the second connection land. The first connection land and the second connection land are bonded to each other with a bonding member, and the insulating layer is thicker than the total thickness of the second connection land and the first connection land. It is possible to obtain an electronic circuit connecting structure which is free from short-circuit due to running of the bonding member such as solder even with the connecting land greatly reduced in size, and its connecting method.

Electronic circuit connecting structure, and its connecting method

Growing community of inventors

Osaka, Japan

Daisuke Suetsugu