Senju Metal Industry Co., Ltd.

Daisuke Soma

Takahiro Roppongi

Hiroyoshi Kawasaki

Isamu Sato

Takahiro Hattori

Yuji Kawamata

Atsushi Ikeda

Hiroki Sudo

Hiroshi Okada

Shigeki Kondo

Takashi Akagawa

Takashi Hagiwara

Masato Tsuchiya

Shigeki Kondoh

Yuichi Koikeda

Masaru Sasaki

Takashi Yashima

Hiroshi Takahashi

Hiroyuki Yamasaki

Tsukasa Ohnishi

Kaichi Tsuruta

Satoshi Yokota

Hiroshi Kawanago

Ryoichi Kurata

Osamu Munekata

Daisuke Maruko

Atsumi Takahashi

Tomoaki Nishino

Tokuro Yamaki

Takashi Hori

Tomohiko Hashimoto

Kazuhiko Matsui

Iwao Nozawa

The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Solder material, solder paste, and solder joint

Provided are a Cu ball, an OSP-treated Cu ball, a Cu core ball, a solder joint, solder paste, and formed solder, which realize high sphericity and low hardness and in which discoloration is suppressed. An electronic component is configured by joining a solder bump of a semiconductor chip and an electrode of a printed circuit board with solder pastes The solder bump formed by joining a Cu ball to an electrode of the semiconductor chip. The Cu ball has a purity of 99.995% by mass or more and 99.9995% by mass or less, a total content of at least one element selected from Fe, Ag, and Ni of 5.0 ppm by mass or more and 50.0 ppm by mass or less, a content of S of 1.0 ppm by mass or less, and a content of P of less than 3.0 ppm by mass.

Cu ball, Osp-treated Cu ball, Cu core ball, solder joint, solder paste, formed solder, and method for manufacturing Cu ball

The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Cu core ball, solder joint, solder paste and formed solder

Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 &#x3bc;m, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

Cu column, Cu core column, solder joint, and through-silicon via

Provided is a solder material having oxidation resistance at the time of melting solder or after melting it, as well as managing a thickness of oxide film at a fixed value or less before melting the solder. A Cu core ballA is provided with a Cu ballA for keeping a space between a semiconductor package and a printed circuit board and a solder layerA that covers the Cu ballA. The solder layerA is composed of Sn or a solder alloy whose main component is Sn. For the Cu core ballA, lightness is equal to or more than 65 in the L*a*b* color space and yellowness is equal to or less than 7.0 in the L*a*b* color space, and more preferably, the lightness is equal to or more than 70 and the yellowness thereof is equal to or less than 5.1.

Solder material, solder paste, solder preform, solder joint and method of managing the solder material

Provided herein is a solder material that includes a spherical core that provides space between a joint object and another object to be joined to the joint object and a solder coated layer that has a melting point at which a core layer of the core is not melted. The solder coated layer includes Sn as a main ingredient and 0 to 2 mass % of Ag, and coats the core. The solder coated layer has an average grain diameter of crystal grains of 3 &#x3bc;m or less, and the solder material has a spherical diameter of 1 to 230 &#x3bc;m and a sphericity of 0.95 or more.

Joining member, solder material, solder paste, formed solder, flux coated material, and solder joint

The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 &#x3bc;m or more to 1000 &#x3bc;m or lower.

Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.

Flux composition for solder applications

A core material including a core and a solder plating layer of a (Sn&#x2014;Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

Core material, semiconductor package, and forming method of bump electrode

A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 &#x3bc;m.

Method of manufacturing cu core ball

Provided are a Cu core ball and a cu core column, which achieve dropping strength and strength against heat cycle. The Cu core ball () contains a Cu ball () made of Cu or a Cu alloy and a solder layer () which is made of a solder alloy composed of Sn and Cu and covers the Cu ball (). The solder layer () contains not less than 0.1% through not more than 3.0% of Cu and the remainder is composed of Sn and impurities.

Cu core ball, solder paste, formed solder, Cu core column, and solder joint

Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnOfilm is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

Solder material, solder joint, and method of manufacturing the solder material

Produced is a metal ball which suppresses an emitted &#x3b1; dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Method for producing metal ball, joining material, and metal ball

A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an &#x3b1; dose of 0.0200 cph/cmor less.

Cu core ball

Provided are a Cu ball, a Cu core ball, a solder joint, solder paste and foamed solder, which are superior in the impact resistance to dropping and can inhibit any occurrence of poor joints a junction defect. An electronic componentis constructed by joining a solder bumpof a semiconductor chipto an electrodeof a printed circuit boardwith solder paste. The solder bumpis formed by joining an electrodeof the semiconductor chipto the Cu ball. The Cu ballaccording to the present invention contains purity which is equal to or higher than 99.9% and equal to or lower than 99.995%, sphericity which is equal to or higher than 0.95, and Vickers hardness which is equal to or higher than 20 HV and equal to or less than 60 HV.

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Tochigi, Japan

Daisuke Soma