Hitachi-high-technologies Corporation

Canon Kabushiki Kaisha

Hitachi High-tech Corporation

Hitachi, Ltd.

Skhynix Inc.

Daisuke Shiraishi

Akira Kagoshima

Ryoji Asakura

Satomi Inoue

Shoji Ikuhara

Hideyuki Yamamoto

Kenji Tamaki

Junichi Tanaka

Hiroyuki Kitsunai

Toshio Masuda

Toshihiro Morisawa

Yuji Nagatani

Toshiaki Minami

Shigeru Nakamoto

Motohisa Ito

Akiyoshi Momoi

Takeshi Hiraoka

Shota Umeda

Chuma Nagao

Masahiro Sumiya

Makoto Fujiwara

Koichi Morishita

Shunichi Kaizu

Yasunari Nagamatsu

Koji Moriya

Hiroyuki Nakano

Koji Sato

Motohiko Yoshigai

Akihiro Takamura

Makoto Hayakawa

Kazuhiko Morimura

Takehiko Sato

Wataru Ochiai

Keita Nogi

Kota Asano

Takeshi Arai

Natsuyo Morioka

Hiroshige Uchida

Hideyuki Yamamato

An imaging system includes a frame memory component configured to perform a read operation or a write operation of image data. The imaging system also includes an image signal processor configured to write the image data input into the frame memory component in a predetermined order, process data read from the frame memory component, and output the processed image data. The image signal processor converts an order of processing the image data to a direction different from a direction in which the image data is input, process the resultant data, aligns the order of the processed image data in the predetermined order, and outputs the resultant data.

Image signal processor and imaging system including the same

A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Plasma processing apparatus, plasma processing method and plasma processing analysis method

In a memory controller, at least one of a plurality of refresh methods varying in refresh target area of a dynamic random access memory (DRAM) is a refresh method of refreshing an entire area of the DRAM, and a specific event that disables access to the entire area of the DRAM occurs in a cycle longer than a refresh execution cycle using the refresh method of refreshing the entire area of the DRAM. The memory controller includes a selection unit configured to select one refresh method from among the plurality of refresh methods, depending on whether the specific event that disables the access to the entire area of the DRAM is to occur in a refresh execution period.

Memory controller, control method for memory controller, and storage medium

A memory controller configured to control a dynamic random access memory (DRAM) includes a first control circuit and a second control circuit. The first control circuit is configured to store a request received by the memory controller in a first storage circuit, and select a request from all requests stored in the first storage circuit. The second control circuit is configured to store the request selected by the first control circuit in a second storage circuit, reorder requests stored in the second storage circuit, generate a DRAM command, and issue the DRAM command to the DRAM. The first control circuit is configured to select the request based on target banks and target pages of the requests stored in the second storage circuit, and a state of a bank or page of the DRAM.

Memory controller to process requests for DRAM, control method for memory controller, and storage medium

The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

Plasma processing apparatus and plasma processing system

A memory controller that is formed to be able to issue a first write command for writing data of a predetermined length into a DRAM and a second write command for writing data which is less than the predetermined length in the DRAM is provided. The memory controller comprises a deciding unit configured to decide an issuance order of a request stored in the storage unit. In a period from the issuance of a preceding DRAM command until a second write command targeting the same bank as the preceding DRAM command is issued, if another DRAM command targeting a bank different from the bank targeted by the preceding DRAM command can be issued, the deciding unit will decide the issuance order so that the other DRAM command that can be issued will be issued before the second write command.

Memory controller and memory control method that decides an order of issuing dram commands based on whether a command has a penalty period

A memory control circuit includes an access storage unit configured to store access requests for a memory, a status management unit configured to, based on the access requests stored in the access storage unit, perform priority access type switching between two access types obtained by classifying the access requests, and an access selection unit configured to select and execute an access request stored in the storage unit. The access selection unit performs, if the priority access type switching is in progress and there is time for executing an access request of a priority access type before the priority access type switching, selecting the access request of the priority access type before the priority access type switching, and if the priority access type switching is not in progress, selecting an access request of the priority access type.

Memory control circuit, information processing system, and memory control method

A memory controller for accessing a memory, comprises a holding circuit which holds a plurality of read or write access requests from a bus master, a read/write control circuit which selects one of the access requests in the holding circuit and issues a read command or a write command; and an active control circuit which selects the access request held in the holding circuit and issues an active command, wherein the active control circuit includes a generation circuit that generates number of activated read commands and number of activated write commands, and a selection circuit that, when the number of activated read commands is not less a threshold, issues the active command of an read access, and when the number of activated write commands is not less than the threshold, issues the active command of a write access.

Memory controller and method of controlling the memory controller

A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

Plasma processing apparatus

In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Plasma processing apparatus and data analysis apparatus

A memory controller is able to issue a first write command for writing data of a predetermined length into a DRAM and a second write command for writing data which is less than the predetermined length in the DRAM. The memory controller includes a deciding unit configured to decide an issuance order of one or more requests stored in a storage unit. In a period from the issuance of a preceding DRAM command until a second write command targeting the same bank as the preceding DRAM command is issued, if another DRAM command targeting a bank different from the bank targeted by the preceding DRAM command can be issued, the deciding unit will decide the issuance order so that the other DRAM command that can be issued will be issued before the second write command.

DRAM access technique to reduce latency due to write command length

There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Analysis method and semiconductor etching apparatus

According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

Plasma processing apparatus and analysis method for analyzing plasma processing data

A bus system comprises a master, a first slave, a second slave, and a bus. The master is configured to be able to issue a second request to the second slave after issuing a first request to the first slave and before receiving a response to the first request. The bus comprises: a determination unit configured to, upon receiving the second request, determine whether to permit a transfer of the second request to the second slave; and a suspending unit configured to suspend the transfer of the second request to the second slave while it is determined by the determination unit that the transfer is not permitted. The determination unit determines whether or not the transfer is permitted based on a notification from the first slave regarding processing of the first request.

Bus system permitting parallel access by a master to a plurality of slaves and method of controlling the same

A lens apparatus includes a detector configured to detect a camera shake, a correction unit configured to correct an image shake caused by the camera shake based on the detected camera shake, a driving device configured to move the correction unit, a holder holding the detector, and a fiber assembly via which the holder holds the detector.

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Tokyo, Japan

Daisuke Shiraishi