Toyoda Gosei Co., Ltd.

Koha Co., Ltd.

Daisuke Shinoda

Yoshiki Saito

Hironao Shinohara

Shinichi Matsui

Yasuhiro Takenaka

Naoki Shibata

Kazuo Aoki

Hisayuki Miki

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Takashi Hodota

Koji Hirata

Yasuhisa Ushida

Yasunori Uchida

Katsuya Hadano

Shugo Nitta

Yuhei Ikemoto

Isao Takada

Yasushi Ido

Daisuke Yamazaki

A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlGaN (0.1&#x2264;x&#x2264;1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Light emitting element including contact electrode with laminate structure, and method of manufacturing the same

To provide a method for producing a Group III nitride semiconductor light-emitting device using a substrate containing Al such as AlN substrate while suppressing polarity inversion. The production method comprising an oxide film formation step, a first Group III nitride layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, and a second semiconductor layer formation step. In the production method, an AlN substrate or AlGaN substrate is employed. In the oxide film formation step, an oxide film containing Al atoms, N atoms, and O atoms is formed. In the first Group III nitride layer formation step, an AlN layer or AlGaN layer is formed as the first Group III nitride layer under the condition that the substrate temperature 1200&#xb0; C. to 1450&#xb0; C.

Method for producing group III nitride semiconductor light-emitting device

A light-emitting element includes an n-type semiconductor layer mainly including AlGaN (0.5&#x2264;x&#x2264;1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Light-emitting element

A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20&#xb0; C. to 80&#xb0; C. than the temperature of 1000&#xb0; C. to 1200&#xb0; C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 &#x3bc;m to 2 &#x3bc;m and a side surface inclined by 40&#xb0; to 80&#xb0;. A preventing layer may be formed of GaN at 600&#xb0; C. to 1050&#xb0; C. so as to cover the entire top surface of the buffer layer.

A method of forming a low temperature-grown buffer layer having the steps of: placing a GaOsubstrate in a MOCVD apparatus; providing a Hatmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350&#xb0; C. to 550&#xb0; C.; and supplying a source gas having two or more of TMG, TMA and NHonto the GaOsubstrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the GaOsubstrate.

Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device

Metal cell tanks including secondary cells respectively are connected to one another by connection members. For example, a connection member has: an insulation portion interposed between adjacent cell tanks for keeping the cell tanks electrically insulated from each other; an one-end holding portion extending from one end of the insulation portion for holding one end portion of one of the adjacent cell tanks; and an opposite-end holding portion extending from the other end of the insulation portion for holding the other end portion of the other of the adjacent cell tanks.

Connection member and battery pack

Growing community of inventors

Kiyosu, Japan

Daisuke Shinoda