Semiconductor Components Industries, LLC

Daisuke Sasaki

Hidefumi Saito

Takashi Shibasaki

Takahisa Makino

Masanori Shimizu

A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead () and lead () though which high current passes are disposed superimposed on the upper surface of a circuit board (). Also, a plurality of ceramic substrates (A-F) are affixed to the circuit board (), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead () or the other lead () via fine metal wires.

Circuit device

A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. The hybrid integrated circuit device () is provided with: a circuit board (); a plurality of ceramic substrates (A-G) disposed on the top surface of the circuit board (); circuit elements such as transistors mounted on the top surface of the ceramic substrates (A-G); and a lead () or the like that is connected to the circuit elements and is exposed to the outside. Furthermore, in the present embodiment, leads (A-C) are disposed superimposed in the vicinity of the center of the circuit board (), and a circuit element such as an IGBT is disposed and electrically connected approaching the region at which the leads are superimposed. The alternating current transformed by the IGBT is output externally via the leads (A, etc.).

A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate () is disposed on the top surface of a circuit board () comprising a metal, and a transistor () such as an IGBT is mounted to the top surface of the ceramic substrate (). As a result, the transistor () and the circuit board () are insulated from each other by the ceramic substrate (). The ceramic substrate (), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (), short circuiting between the transistor () and the circuit board () is prevented.

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Ota, Japan

Daisuke Sasaki