Nichia Corporation

Daisuke Sanga

Masahiko Sano

Masatsugu Ichikawa

Shunsuke Minato

Toru Takasone

Yuta Oka

Takeshi Kususe

Shinichi Daikoku

Kunihito Sugimoto

Kensuke Yamaoka

Hisashi Kasai

Keisuke Sejiki

Toru Taruki

Tsuyoshi Okahisa

Yoshiyuki Aihara

Takao Yamada

Takahiko Sakamoto

Dai Wakamatsu

Tomonori Morizumi

Takuya Okada

Naoki Azuma

Kouichiroh Deguchi

Takashi Ichihara

Takao Kosugi

Hiroaki Kuroda

Kazuhiro Miyagi

A light-emitting module including a first wiring substrate, a second wiring substrate located on the first wiring substrate, a plurality of light-emitting elements located on the second wiring substrate, a wire connecting a first terminal of the first wiring substrate and a second terminal of the second wiring substrate, a first resin located on the first wiring substrate and on the second wiring substrate, and a protective member located on the first resin. The first resin covers the wire and surrounds the plurality of light-emitting elements when viewed in plan view. The protective member includes a light-transmitting member covering the first resin when viewed in plan view, and a light-shielding film located at a surface of the light-transmitting member. The light-shielding film covers the first resin when viewed in plan view.

Light-emitting module

A method for manufacturing a light emitting module includes: providing an intermediate body including: a wiring substrate including a metal layer, a first conductive member, and a second conductive member; disposing a resist layer on the intermediate body; disposing a light-emitting element on the resist layer, the light-emitting element comprising: a first electrode, and a second electrode; forming on the metal layer: a first bonding member in contact with the first conductive member and the first electrode, and a second bonding member separated from the first conductive member and in contact with the second conductive member and the second electrode; and removing the resist layer.

Light emitting module and method for manufacturing light emitting module

A method of manufacturing a light emitting device includes: providing a light emitting element including a p-side electrode and a n-side electrode on a same surface side; providing a substrate on which first and second wiring seed layers are formed; forming a resist pattern within an area on the substrate where the light emitting element is to be placed; placing the light emitting element on the resist pattern such that the p-side electrode and the first wiring seed layer are separated from and face each other, and the n-side electrode and the second wiring seed layer are separated from and face each other; joining the first wiring seed layer with the p-side electrode, and joining the second wiring seed layer with the n-side electrode, by plating using the resist pattern as a mask; and removing the resist pattern.

Method of manufacturing light emitting device and light emitting device

An optical member includes a first light guide member having an elongated shape and comprising an end surface and a lateral surface extending in a longitudinal direction from the end surface; and a wavelength conversion layer disposed on the lateral surface of the first light guide member and containing a phosphor.

Optical member, composite optical member, and lighting device

A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Light emitting device and method of manufacturing light emitting device

A light emitting device includes: a base; a first terminal and a second terminal located at a surface of the base; a light emitting element array chip mounted on the base, the light emitting element array chip including: a support substrate, a plurality of first wirings and a plurality of second wirings disposed on the support substrate, and a plurality of light emitting elements, each of the light emitting elements arranged on the first wiring and the second wiring and electrically connected to the first wiring and the second wiring; and a plurality of wires including a first wire connecting the first wiring to the first terminal, and a second wire connecting the second wiring to the second terminal.

Light emitting device and adaptive driving beam headlamp

A method for manufacturing a light emitting device includes: providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure, and a growth substrate; bonding the wafer to a support substrate; exposing the semiconductor layer by removing the growth substrate from the wafer; separating the semiconductor layer into a plurality of light emitting elements, which comprises forming grooves on a semiconductor layer side surface of the wafer; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers surfaces of the light emitting elements, which comprises: forming a coating film on surfaces of the light emitting elements by applying a slurry comprising phosphor particles contained in a solvent, and vaporizing the solvent in the coating film to form the phosphor layer.

Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same

A light emitting device includes: light emitting cells arranged in column and row directions, each including a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first insulation layer continuously disposed on the light emitting cells and having, in each light emitting cell, a first hole on the first semiconductor layer exposed from the second semiconductor layer and a second hole on the second semiconductor layer; a wiring electrode having light reflectivity, covering the first insulation layer, and electrically connected with the first semiconductor layer at the first hole in each light emitting cell; and a second electrode disposed in each light emitting cell and electrically connected with the second semiconductor layer at the second hole. The first insulation layer is exposed from the first semiconductor layer between the light emitting cells. The lower face of the first semiconductor layer has a roughened surface.

Light emitting device

A method of manufacturing a light emitting device includes: providing a semiconductor stack including a first semiconductor layer and a second semiconductor layer; forming light emitting cells by forming grooves in column and row directions; exposing a portion of the first semiconductor layer from the second semiconductor layer in each light emitting cell; forming a first insulation layer having a first hole on the light emitting cells and the grooves; forming a wiring electrode to be in electrical connection with the first semiconductor layer at the first hole in each light emitting cell; forming a second hole in the first insulation layer; forming a second electrode to be in electrical connection with the second semiconductor layer at the second hole; thinning the first semiconductor layer; and exposing the first insulation layer from the first semiconductor layer at the grooves while roughening the surface of the first semiconductor layer.

Light emitting device and method of manufacturing same

A light emitting device has a lens, extended to outside of the mounting substrate on which a semiconductor a light emitting element is mounted, and leakage of light is reduced. A light emitting element, a substrate having the light emitting element mounted on its upper surface, and a lens, having a curved upper surface encloses the light emitting element and the upper surface of the substrate is included. From the bottom surface of the lens, a lower surface of the substrate is exposed. In a top view from a perpendicular direction to the upper surface of the substrate, the bottom surface of the lens includes an outer extending portion where the bottom surface is extended to outside of the substrate, and a inclined portion, which inclines with respect to a direction approximately in parallel to the upper surface of the substrate, at an end portion of the outer extending portion.

A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface () parallel to a lamination direction of a semiconductor layer (). The semiconductor light emitting device includes a light guide member () placed on the semiconductor layer () and having a sloped surface () with a side surface opposite to the light extraction surface () sloped to the light extraction surface and a light-reflecting member () placed on a surface of the light guide member including at least the sloped surface of the light guide member.

Semiconductor light emitting device and method of manufacturing the same

Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer. The bandpass filter has a transmittance of 60% or more for light having a light emission peak wavelength of the light emitting element at an incident angle of 0 to 85&#xb0;, and another transmittance of 40% or less for light having a light emission peak wavelength of at least one kind of phosphor at an incident angle of a Brewster's angle (&#x3b8;)+5&#xb0; (&#x3b8;+5&#xb0;) to 85&#xb0; of the bandpass filter.

Growing community of inventors

Tokushima, Japan

Daisuke Sanga