Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Hitachi Displays, Ltd.

Other

Renesas Technology Corp.

Renesas Electronics Corporation

Fujifilm Healthcare Corporation

Daisuke Ryuzaki

Shuntaro Machida

Keiji Watanabe

Toshiyuki Mine

Tomohiro Iwano

Kenji Hinode

Takeshi Furusawa

Yousuke Hoshi

Takenori Narita

Hiroyasu Shichi

Daisuke Sonoda

Nobuyuki Sugii

Tetsufumi Kawamura

Naoyuki Koyama

Shigeru Nobe

Taiichi Takezaki

Kazuyoshi Torii

Kenichi Takeda

Toshiki Kaneko

Mutsuko Hatano

Kazuki Watanabe

Noriyuki Sakuma

Yasuhiro Yoshimura

Tatsuya Nagata

Hiroaki Hasegawa

Misuzu Sagawa

Tadahiro Kimura

Naoaki Yamashita

Hirotaka Akimoto

Yoshitaka Sasago

Takashi Hattori

Masaharu Kinoshita

Katsuya Miura

Hideo Arimoto

Hisanori Matsumoto

Masatoshi Morishita

Shigeaki Funyuu

Kenichi Ishitsuka

Koji Fujisaki

Naoki Asano

Ryou Yoneyama

Yuko Hanaoka

Hiroshi Fukuda

Kazuki Tani

Takashi Takahama

Kei Kasuya

Iori Fukushima

Tetsushi Maruyama

Aki Takei

Kouichi Abe

Yousuke Aoki

Kyouko Kojima

A capacitive micromachined ultrasonic transducerA includes: a silicon substratean insulating filmformed over the silicon substratea lower electrode; insulating filmsanda cavityconstituted by a void formed in a portion of the insulating filman upper electrodeinsulating filmsandand a protective filmIn addition, the insulating filmupper electrodeinsulating filmand insulating filmabove the cavityconfigure a vibration filmand the protective filmabove the vibration filmis divided into a plurality of isolated patterns regularly arranged with a gaphaving a constant spacing formed therebetween.

Capacitive micromachined ultrasonic transducer and ultrasonic imaging apparatus using the same

A sensor system that detects a vibration of a rotating part with a high accuracy even in a case in which a sensor is additionally attached is provided. The invention is directed to a sensor system includes a board that is installed in a rotating part of a cut processing machine; a plurality of acceleration sensors mounted on the board, and a signal processing unit (arithmetic operation). The signal processing unit detects a translational acceleration accompanying moving of the rotating part and a centrifugal acceleration accompanying rotation of the rotating part on the basis of acceleration data detected by each of the acceleration sensors.

Sensor system

Technique that enables precisely measuring cavity height and precisely grasping maximum transmission sound pressure in an ultrasonic probe is provided to the ultrasonic probe using CMUT. The ultrasonic probe according to the present invention includes plural cells each of which includes a lower electrode and an upper electrode arranged via a gap with respect to the lower electrode, and the plural cells include an ultrasonic cell the gap of which is void and which transmits/receives an ultrasonic wave and a reference cell the gap of which is filled with a conductive material. Electrostatic capacity of the ultrasonic cell and the reference cell is measured, parasitic capacity included in the measured electrostatic capacity as to the ultrasonic cell is corrected using parasitic capacity included in the measured electrostatic capacity as to the reference cell, and cavity height is calculated on the basis of the corrected electrostatic capacity of the ultrasonic cell.

Ultrasound probe, performance evaluation method therefor, and ultrasound diagnostic equipment

A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Sensor characteristic evaluation method and charged particle beam device

The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

An ultrasonic transducer element includes a substrate, a lower electrode on a first surface of the substrate, a first insulating film on the lower electrode, a first cavity layer on the first insulating film, a second insulating film on the first cavity layer, an upper electrode on the second insulating film that overlaps the first cavity layer, a third insulating film on the upper electrode, a second cavity layer on the third insulating film, a fourth insulating film on the second cavity layer, a fixing portion formed by the second to fourth insulating films, a movable portion in a membrane insides the second cavity layer, a first connection portion and a second connection portion that are stacked with a gap and the connection portions are configured by the second to fourth insulating films connecting the movable portion and the fixing portion.

Ultrasonic transducer element, method of manufacturing the same, and ultrasonic image pickup device

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

MEMS manufacturing method and MEMS manufacturing apparatus

A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.

Ultrasonic transducer, method for making same, ultrasonic transducer array, and ultrasonic test apparatus

A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

Microstructure manufacturing method and ION beam apparatus

The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Microstructure manufacturing method and microstructure manufacturing apparatus

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Device processing method and device processing apparatus

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Microstructure processing method and microstructure processing apparatus

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

Polishing agent and method for polishing substrate using the polishing agent

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b).

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Growing community of inventors

Tokyo, Japan

Daisuke Ryuzaki