Fuji Electric Co., Ltd.

Daisuke Ozaki

Yuichi Onozawa

Takashi Yoshimura

Tohru Shirakawa

Hidenao Kuribayashi

Yasunori Agata

Takahiro Tamura

Yoshihiro Ikura

Seiji Noguchi

Hayato Nakano

Akinori Kanetake

Yosuke Sakurai

Misaki Takahashi

Kaname Mitsuzuka

Hidenori Takahashi

Ryouichi Kawano

Naoki Mitamura

Aki Shimamura

Ryutaro Hamasaki

Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. Both the transistor portion and the diode portion include a base region of a second conductivity type on a front surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the front surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.

Semiconductor device having an injection suppression region

Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. The diode portion includes a lifetime control region including a lifetime killer. Both the transistor portion and the diode portion include a base region of a second conductivity type on a surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.

Semiconductor device

Provided is a semiconductor device including a semiconductor substrate provided with a transistor portion, wherein the semiconductor substrate includes, in the transistor portion, a drift region of a first conductivity type; an accumulation region of the first conductivity type that has a higher doping concentration than the drift region; a collector region of a second conductivity type; and a plurality of gate trench portions and a plurality of dummy trench portions that are provided extending in a predetermined extension direction in the top surface of the semiconductor substrate, and are arranged in an arrangement direction orthogonal to the extension direction, and the transistor portion includes a first region that includes a gate trench portion; and a second region in which the number of dummy trench portions arranged in a unit length in the arrangement direction is greater than in the first region.

Semiconductor device for improving transistor characteristics during turn-on

A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.

A semiconductor device is provided comprising an active portion and a terminating structure. The semiconductor device is provided comprising the active portion provided in the semiconductor substrate and a terminating structure provided at a termination of the front surface side of the semiconductor substrate and that mitigates an electric field of the termination. In the electric field distribution of the front surface side of the terminating structure, during rated voltage application, an electric field at the end portion of the active portion side may be smaller than a maximum value of an electric field distribution of the front surface side. In addition, the electric field distribution of the terminating structure may have a maximum peak of the electric field on the edge side opposite to the active portion with respect to a center of the terminating structure.

A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Semiconductor device and method of manufacturing the same

In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an ntype drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a ptype collector layer toward a p-type base layer, and the diffusion depth is 20 &#x3bc;m or more. Furthermore, an ntype buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6&#xd7;10cmor more, and one-tenth or less of the peak impurity concentration of the ptype collector layer, can be included between the n-type field-stop layer and ptype collector layer.

Growing community of inventors

Okaya, Japan

Daisuke Ozaki