Nichia Corporation

Osaka University

Tokai National Higher Education and Research System

Nagoya University

National University Corporation Tokai National Higher Education and Research System

National University Corporation Tokai National

Daisuke Oyamatsu

Tsukasa Torimoto

Tatsuya Kameyama

Taro Uematsu

Susumu Kuwabata

Kenta Niki

Kazutaka Wajima

Marino Kishi

Chie Miyamae

Hiroki Yamauchi

Yuki Mori

Akihiro Fukatsu

Hiroto Tamaki

Tadao Hayashi

Takafumi Sugiyama

Takayoshi Wakaki

Yoshiki Sato

Takao Kosugi

Tomoya Kubo

Yujiro Ishigami

Kouta Sugiura

Yohei Ikagawa

Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.

Method of producing semiconductor nanoparticles

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M, M, and Z. Mis at least one element selected from the group consisting of Ag, Cu, and Au. Mis at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Semiconductor nanoparticles and method of producing semiconductor nanoparticles

Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M, M, and Z, Mcontaining at least one selected from the group consisting of Ag, Cu, and Au, Mcontaining at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.

Core-shell semiconductor nanoparticles, production method thereof, and light-emitting device

Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.

Semiconductor nanoparticles and method for producing same

Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.

Semiconductor nanoparticle, method for manufacturing same, and light emitting device

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 □C to 175 □C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 □C to 175 □C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

Semiconductor nanoparticles, production method thereof, and light-emitting device

Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125&#xb0; C. to 175&#xb0; C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125&#xb0; C. to 175&#xb0; C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device

A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element Min a solvent at a temperature set in a range of 100&#xb0; C. to 300&#xb0; C. The primary semiconductor nanoparticles contain the element M, an element M, optionally an element M, and an element Z, and have an average particle size of 50 nm or less. The element Mis at least one element selected from the group consisting of Ag, Cu, and Au. The element Mis at least one element selected from the group consisting of Al, Ga, In, and Tl. The element Mis at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

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Tokushima, Japan

Daisuke Oyamatsu