Mitsubishi Electric Corporation

Dowa Metaltech Co., Ltd.

Daisuke Oya

Yukimasa Hayashida

Ryutaro Date

Yasuhiro Sakai

Ryo Tsuda

Kenji Hatori

Hitoshi Uemura

Shinichi Iura

Tatsuya Iwasa

Keisuke Tanaka

Koji Saito

Mikio Ishihara

Tetsuo Motomiya

Yuki Wakabayashi

Satoshi Yokota

Katsumi Nakamura

Koji Kobayashi

Hideyo Osanai

Yoshiko Tamada

Junichi Nakashima

Shota Morisaki

Takayuki Matsumoto

Takuma Tsubota

An object of the present invention is to provide a power semiconductor device enabling a downsizing of a module. A power semiconductor device according to the present invention includes: emitter main electrodes each provided in each of a plurality of semiconductor chips; and main electrode emitter sense terminals directly connected to each of the emitter main electrodes and partially exposed outside a module, wherein each of the main electrode emitter sense terminals is located diagonally to each other, and a distance from each of the main electrode emitter sense terminals to each of the emitter main electrodes connected to each of the main electrode emitter sense terminals is smaller than a distance between the main electrode emitter sense terminals in a plan view outside the module.

Power semiconductor device

There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

Aluminum/ceramic bonding substrate and method for producing same

It is an object to provide technology allowing for improvement in productivity of a semiconductor device. A semiconductor device includes: a base plate; an insulating substrate including a ceramic plate integrally bonded to an upper surface of the base plate with no solder layer therebetween and a circuit pattern disposed on an upper surface of the ceramic plate; a semiconductor element mounted on an upper surface of the circuit pattern; a case surrounding the insulating substrate and the semiconductor element over the base plate; an adhesive to adhere a lower portion of the case to an outer peripheral portion of the ceramic plate; and a sealant to seal the interior of the case, wherein the adhesive is in contact with an outer peripheral end of the ceramic plate to an outer peripheral end of the circuit pattern.

Integrally bonded semiconductor device and power converter including the same

A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.

Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode

In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Semiconductor-mounting heat dissipation base plate and production method therefor

An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.

Semiconductor module and power conversion apparatus

A wiring board () is provided on a heat radiation plate (). A semiconductor chip () is provided on the wiring board (). A case housing () is provided on the heat radiation plate () and surrounds the wiring board () and the semiconductor chip (). Adhesive agent () bonds a lower surface of the case housing () and an upper surface peripheral portion of the heat radiation plate (). A sealing material () is filled in the case housing () and covers the wiring board () and the semiconductor chip (). A step portion () is provided to at least one of the lower surface of the case housing () and the upper surface peripheral portion of the heat radiation plate (). A side surface of the heat radiation plate () and an outer side surface of the case housing () are flush with each other.

Semiconductor device

A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.

Semiconductor device manufacturing method including forming a wide portion spreading over a looped portion

Provided is a semiconductor module in which a case and a base plate joined together with a simple structure, the semiconductor module having high insulation strength. The semiconductor module includes the following: a base plate; at least one semiconductor chip disposed inside the base plate other than the outer periphery of the base plate and above the base plate; and a case joined to the outer periphery of the base plate with an adhesive, and containing the at least one semiconductor chip. The upper surface of the base plate is provided with a recess or a protrusion between an inner wall of the case and the at least one semiconductor chip in a plan view.

Semiconductor module

Semiconductor device including a cylindrical electrode inserted into a looped portion of an electrode

A semiconductor device includes a first ceramic substrate, a second ceramic substrate, an inter-ceramic metal having an intermediate portion interposed between an upper surface of the first ceramic substrate and a lower surface of the second ceramic substrate, a first surmounting portion formed on an upper surface of the second ceramic substrate, a second surmounting portion formed on the upper surface of the second ceramic substrate, a first connection portion abutting on an outer edge of the second ceramic substrate and connecting the intermediate portion and the first surmounting portion, and a second connection portion abutting on an outer edge of the second ceramic substrate and connecting the intermediate portion and the second surmounting portion, a circuit pattern formed on the second ceramic substrate, and a semiconductor element provided on the circuit pattern.

Growing community of inventors

Tokyo, Japan

Daisuke Oya