Honda Motor Co., Ltd.

Daisuke Okamura

Tadahiro Kubota

Nariaki Kuriyama

Jun Sasahara

Takeshi Ohsato

Katustoshi Nosaki

In a method for forming a light absorber layer () of a thin film solar cell, the absorber layer is formed from a plurality of sub-layers each of which is formed by preparing a plurality of mixtures containing Cu, Se, In and Ga in a liquid medium, a composition ratio of In to Ga being progressively increased from one mixture to another, the mixtures optionally including a mixture containing no In or Ga; applying a layer of one of the mixtures onto a back electrode layer () formed on a substrate (); drying the applied layer of the mixture; and rapidly baking the dried layer of the mixture. By forming the absorber layer with a plurality of thin absorber sub-layers each having a controlled band gap, a solar cell having a large surface area can be fabricated at low cost and the efficiency of the solar cell can be improved by forming a favorable band gap gradient structure. As these sub-layers can be applied simply by any known processes, the method of the present invention is highly suited to be used for mass producing solar cells.

Method for forming an absorber layer of a thin film solar cell

There is provided a method for producing a force sensor including: a force sensor chip; and an attenuator, in which the force sensor chip and the attenuator are joined at joint portions with a glass layer sandwiched therebetween. The method includes: a film forming step in which a glass film as the glass layer is formed on regions of the attenuator containing the joint portions or on regions of the force sensor chip containing the joint portions; and an anodic bonding step in which the force sensor chip and the attenuator are stacked as a stacked body in close contact with each other at the joint portions, and the glass film and the force sensor chip, or the glass film and the attenuator, are joined.

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Wako, Japan

Daisuke Okamura