Kabushiki Kaisha Yakult Honsha

Waseda University

Teijin Pharma Limited

Daisuke Niwa

Naoki Izawa

Tetsuya Osaka

Ichiro Koiwa

Yasuyuki Takahashi

Toshiro Sone

Takamitsu Okayama

Rei Tamiya

Miyuki Kudo

Yuki Kawase

Satoshi Igarashi

Shosaku Motohara

Akemi Imaoka

A method is shown for preparing a specimen for extensively analyzing a resident skin bacterium and/or a substance present in the stratum corneum, such as a protein or a lipid, or observing the shape of the stratum corneum. A method for preparing a specimen for analyzing a resident skin bacterium and/or a substance present m the stratum corneum or observing the shape of the stratum, includes applying a solution containing a polyvinyl alcohol polymer to the skin so as to form a thin-film and peeling and collecting the formed thin-film.

Method for preparing specimen for analysis or observation of skin

A phototherapy device including: an irradiation probe for radiating irradiation light toward a living body; a probe fixing unit into which the irradiation probe is inserted and at the same time fixed on a living body; an observation module placed on the probe fixing unit and provided with an observation means for observing an irradiation site irradiated with irradiation light which is radiated to the living body; and a moving means capable of moving the observation module to a space where the irradiation probe is to be placed in the probe fixing unit during observation of the irradiation site.

Phototherapeutic apparatus

A pentosidine production inhibitor including a lactic acid bacterium fermentation product as an active ingredient, which has a stronger action and a high safety as a component having an action of inhibiting production of pentosidine.

Pentosidine production inhibitor

A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device

Growing community of inventors

Tokyo, Japan

Daisuke Niwa