Kyocera Corporation

Daisuke Nishimura

Hisao Arimune

Yosuke Inomata

Norihiko Matsushima

Ken Nishiura

Toshifumi Sugawara

Tsuyoshi Uesugi

Sentaro Yamamoto

Seiichiro Inai

Yoshihide Okawa

Isamu Tanaka

To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion deviceincludes a substratea plurality of lower electrodeson the substratecomprising a metal element, a plurality of photoelectric conversion layerscomprising a chalcogen compound semiconductor formed on the plurality of lower electrodesand separated from one another on the lower electrodesa metal-chalcogen compound layercomprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrodeand the photoelectric conversion layeran upper electrodeformed on the photoelectric conversion layerand a connection conductorelectrically connecting, in a plurality of the photoelectric conversion layersthe upper electrodeto the lower electrodewithout interposition of the metal-chalcogen compound layer

Photoelectric conversion device and manufacturing method of the same

The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Production method of photoelectric conversion device and solution for forming semiconductor

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Higashiomi, Japan

Daisuke Nishimura