Showa Denko K.k.

Daisuke Muto

Yoshiaki Kageshima

Kenji Momose

Akira Miyasaka

Jun Norimatsu

Yutaka Tajima

Koji Kamei

Michiya Odawara

Tomoyuki Noguchi

Yoshihiko Miyasaka

A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.

Crystal growth apparatus with controlled center position of heating

A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a&#x3c;11-20&#x3e;direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

Method for producing SiC epitaxial wafer including forming epitaxial layer under different conditions

Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof

A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))&#xd7;90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))&#xd7;110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cmto 0.5 pieces/cm(where x indicates the off angle).

SiC epitaxial wafer and method for manufacturing the same

A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer

Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

An epitaxial wafer manufacturing device, including a shield (), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (). The shield has a substrate () having an opening () in the central portion thereof that forces a gas inlet () to face the inside of a reaction space (K), and a thin film () that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Epitaxial wafer manufacturing device and manufacturing method

Provided is an epitaxial wafer manufacturing device () that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (), arranged in close proximity to the lower surface of a top plate () so as to prevent deposits from being deposited on the lower surface of the top plate (), is removably attached inside the chamber, has an opening () in the central portion thereof that forces a gas inlet () to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (), () and () around the opening ().

A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Growing community of inventors

Chichibu, Japan

Daisuke Muto