Mitsubishi Electric Corporation

Toppan Printing Co., Ltd.

Mitsubishi Electric Corpotation

Daisuke Murata

Hiroshi Yoshida

Hidetoshi Ishibashi

Yuji Imoto

Takuya Kitabayashi

Seiji Oka

Kenta Nakahara

Toru Ookubo

Satoshi Kondo

Masao Kikuchi

Junji Fujino

Naoki Yoshimatsu

Mikio Ishihara

Taketoshi Shikano

Shinsuke Asada

Nobuyoshi Kimoto

Yusuke Kaji

Masayoshi Shinkai

Nobuhiro Asaji

A protective film containing a transparent polyolefin resin layer with improved or even superior weather resistance, and a sheet using the protective film. A protective film according to the present embodiment includes at least a transparent polyolefin resin layer. The transparent polyolefin resin layer contains a hindered amine light stabilizer represented by general formula (I) below in a range of 0.05 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of a transparent olefin resin included in the transparent polyolefin resin layer. (In general formula (I), R is an alkyl group having 1-18 carbon atoms, or a cycloalkyl group having 5-8 carbon atoms.)

Protective film and sheet

A protective film that includes at least one of a transparent polyolefin resin layer and a surface protection layer, and that has excellent weather resistance and a low level of white turbidity, which is a factor that impairs design properties; and a sheet using the protective film. The protective film comprises at least a transparent polyolefin resin layer, wherein the transparent polyolefin resin layer contains a first hydroxyphenyltriazine-based ultraviolet absorber (UVA-A) having a structure represented by the general formula below. In the general formula, R1-R3 each independently represent a hydrogen atom, a methyl group, a phenyl group, or an alkoxy group, and at least two of R1-R3 are an alkoxy group having 8-18 carbon atoms, R4 and R5 each independently represent a hydroxyl group, a methyl group, or a hydrogen atom, and R6-R8 each independently represent a methyl group or a hydrogen atom.

According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

Semiconductor device comprising sealing members with different elastic modulus and method for manufacturing semiconductor device

A technique for activating a fuse function in a semiconductor device in a relatively short time is provided. The semiconductor device includes a second bonding material provided on the upper surface of the insulating substrate, a third bonding material provided on an upper surface of the semiconductor element, a through hole extending from the first circuit pattern to the second circuit pattern via the core material, a conductive film provided on an inner wall of the through hole, and a heat insulating material provided inside the through hole and surrounded by the conductive film in plan view. The conductive film allows the first circuit pattern and the second circuit pattern to be conductive.

Semiconductor device having a conductive film on an inner wall of a through hole

According to the present invention, a semiconductor device includes an insulating substrate having an organic insulating layer and a circuit pattern provided on the organic insulating layer; and a semiconductor chip provided on an upper surface of the circuit pattern, wherein a thickness of the circuit pattern is not less than 1 mm and not more than 3 mm. According to the present invention, a method for manufacturing a semiconductor device includes forming a metal layer with a thickness not less than 1 mm and not more than 3 mm on an organic insulating layer; patterning the metal layer by machining processing to form a circuit pattern; and providing a semiconductor chip on an upper surface of the circuit pattern.

Semiconductor device, electric power conversion apparatus and method for manufacturing semiconductor device

A semiconductor device according to the present invention includes a relay substrate provided on a plurality of semiconductor chips. The relay substrate includes an insulating plate in which a through hole is formed, a lower conductor provided on a lower surface of the insulating plate and having a first lower conductor and a second lower conductor, an upper conductor provided on an upper surface of the insulating plate, a connection part provided in the through hole and connecting the second lower conductor and the upper conductor together, and a protruding part which is a part of one of the first lower conductor and the upper conductor and protrudes outward from the insulating plate, the protruding part is connected to a first external electrode, and another of the first lower conductor and the upper conductor is connected to a second external electrode and is positioned inside the insulating plate.

Semiconductor device and electric power conversion apparatus

A semiconductor apparatus includes: a substrate including a circuit pattern on an upper surface side and a metal plate on a lower surface side; a semiconductor device joined to the circuit pattern via a conductive component; a case located to surround the substrate; a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and a bonding agent bonding the case and the metal plate on a side face of the substrate.

Semiconductor apparatus, method for manufacturing the same and electric power conversion device

A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 &#x3bc;m or more.

Semiconductor device

The object of the present invention is to provide a semiconductor device capable of reducing the influence of gas generated from a resin to which a fire retardant is not added, and a power conversion device including the semiconductor device. The semiconductor device according to the present invention includes: a semiconductor element disposed on an insulating substrate; a case disposed around an outer edge of the insulating substrate, the case including an opening facing the semiconductor element; a sealing resin sealing the semiconductor element in the case; and a lid closing the opening of the case, wherein the sealing resin does not contain a fire retardant, the lid contains the fire retardant, and a space is provided between the sealing resin and the lid.

Semiconductor device and power conversion device

A semiconductor device includes semiconductor chips fixed to a board, an insulating plate having a through-hole formed therein, a first lower conductor including a lower main body formed on the lower surface of the insulating plate and soldered to any of the semiconductor chips, and a lower protrusion portion that connects with the lower main body, and extends to the outside of the insulating plate, a second lower conductor formed on a lower surface of the insulating plate and soldered to any of the semiconductor chips, an upper conductor including an upper main body formed on the upper surface of the insulating plate, and an upper protrusion portion that connects with the upper main body and extends to the outside of the insulating plate, and a connection portion provided in the through-hole and connects the upper main body and the second lower conductor.

A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.

Semiconductor device and method for manufacturing the same

A relay substrate in which a circuit pattern and an external electrode are integrated on a insulating plate is used in the semiconductor device. Such configuration makes it possible to reduce a resistance in a current path while preventing the problems occurring when the external electrode is soldered on the semiconductor chip.

A power module includes: a relay substrate including a first conductor layer provided on a front surface and a second conductor layer provided on a back surface; copper blocks provided in holes penetrating through the relay substrate in a thickness direction and connecting the first conductor layer to the second conductor layer; semiconductor devices wherein each semiconductor device includes a main electrode provided at a location facing an end face of the corresponding copper block and only one copper block is electrically connected to one main electrode; an insulating substrate connected to back-surfaces of the semiconductor devices via joining materials; and a sealer sealing the relay substrate, the copper blocks, and the semiconductor devices.

Power module

A semiconductor device includes: a first heat spreader; a second heat spreader separated from the first heat spreader; a first semiconductor element on the first heat spreader and having a back face jointed to the first heat spreader; a second semiconductor element on the second heat spreader and having a back face jointed to the second heat spreader; a resin coating the first and second heat spreaders and the first and second semiconductor elements; and a reinforcing member provided across a region between the first and second heat spreaders in the resin, and having rigidity higher than rigidity of the resin.

Growing community of inventors

Tokyo, Japan

Daisuke Murata