Nichia Corporation

Daisuke Morita

Yuya Yamakami

Masahiko Sano

Shinichi Nagahama

Masashi Yamamoto

Keiji Sakamoto

Tomoya Yanamoto

Motokazu Yamada

A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

Light-emitting device

A light-emitting device includes: a semiconductor layered structure; a conductive substrate disposed under the semiconductor layered structure; one or more upper electrodes each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure; one or more metal members each having light reflectivity and disposed on the lower surface of the semiconductor layered structure in a region between (i) a region directly under a respective one of the one or more the upper electrodes and (ii) the region on which the lower electrode is disposed; one or more first insulating members each disposed on the lower surface of the semiconductor layered structure in the region directly under the respective one of the one or more the upper electrodes; and one or more second insulating members on a lower surface of the metal member.

A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more upper electrodes, each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced apart from regions of the lower surface of the semiconductor layered structure directly under the upper electrodes, the lower electrode being electrically connected between the semiconductor layered structure and the substrate; and one or more conduction prevention portions, each disposed on the lower surface of the semiconductor layered structure in at least a region located between (i) a region directly under a respective one of the one or more upper electrodes and (ii) the region on which the lower electrode is disposed.

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layersto, an active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrate. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

Nitride semiconductor device comprising bonded substrate and fabrication method of the same

A substratefor growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layerstoan active layerand p-type nitride semiconductor layerstoare laminated to form a stack of nitride semiconductor on the first face of the substrateA first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layerA supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substratefor growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layerand the second bonding layerare faced with each other and, then, pressed with heat to bond together. After that, the substratefor growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of In Ga N (x >0) containing In and a first barrier layer made of Al Ga N (y >0) containing Al formed on the well layer.

Growing community of inventors

Tokushima, Japan

Daisuke Morita