Kioxia Corporation

Daisuke Matsubayashi

Masumi Saitoh

Kensuke Ota

A memory device according to an embodiment includes a fluid layer extending in a first direction, a particle in the fluid layer, a first control electrode made of a first material, a first insulating film provided between the fluid layer and the first control electrode, a second control electrode made of a second material and provided to be spaced apart from the first control electrode in the first direction, a second insulating film provided between the fluid layer and the second control electrode, a third control electrode made of a third material different from the first material and the second material and provided between the first control electrode and the second control electrode, and a third insulating film provided between the fluid layer and the third control electrode.

Memory device

A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.

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Sagamihara Kanagawa, Japan

Daisuke Matsubayashi