Semiconductor Energy Laboratory Co., Ltd.

Daisuke Matsubayashi

Shunpei Yamazaki

Keisuke Murayama

Yoshiyuki Kobayashi

Shinpei Matsuda

Junichi Koezuka

Toshinari Sasaki

Yukinori Shima

Tetsuhiro Tanaka

Hajime Tokunaga

Hiroyuki Miyake

Yutaka Okazaki

Masahiko Hayakawa

Yasumasa Yamane

Kazuya Hanaoka

Hideomi Suzawa

Motomu Kurata

Yusuke Nonaka

Noritaka Ishihara

Daigo Ito

Shinya Sasagawa

Hirokazu Watanabe

Shuhei Nagatsuka

Tatsuya Onuki

Yuhei Sato

Hiromi Sawai

Kazuki Tanemura

Yutaka Shionoiri

Takanori Matsuzaki

Yuichi Sato

Yoshiaki Yamamoto

Yoshinobu Asami

Takashi Hamada

Toshihiko Takeuchi

Naoto Yamade

Yuichi Yanagisawa

Masaharu Nagai

Tsutomu Murakawa

Satoshi Shinohara

Hiroki Komagata

Wataru Sekine

Jun Koyama

Masayuki Sakakura

Akihisa Shimomura

Kouhei Toyotaka

Hideaki Shishido

Kazutaka Kuriki

Yuji Egi

Ryota Hodo

Ryo Tokumaru

Seiko Inoue

Masahiro Takahashi

Hiroyuki Tomisu

Etsuko Kamata

Hajime Kimura

Kiyoshi Kato

Naoto Kusumoto

Satoru Okamoto

Yoshitaka Yamamoto

Katsuaki Tochibayashi

Hiroshi Ohki

Kiyofumi Ogino

Toshimitsu Obonai

Hiroaki Honda

Masayuki Kimura

Riho Kataishi

Ryunosuke Honda

Tatsuya Ohnuki

Yasutaka Suzuki

Taichi Endo

A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly integrated semiconductor device including the transistor is provided. A short-channel effect which is caused in a transistor including silicon is not substantially caused in the transistor including an oxide semiconductor film. The channel length of the transistor including the oxide semiconductor film is greater than or equal to 5 nm and less than 60 nm, and the channel width thereof is greater than or equal to 5 nm and less than 200 nm. At this time, the channel width is made 0.5 to 10 times as large as the channel length.

Semiconductor device

A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor

Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Semiconductor device having plurality of insulators

A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Semiconductor device and method for manufacturing the same

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

A first transistor, a second transistor, a capacitor, and first to third conductors are included. The first transistor includes a first gate, a source, and a drain. The second transistor includes a second gate, a third gate over the second gate, first and second low-resistance regions, and an oxide sandwiched between the second gate and the third gate. The capacitor includes a first electrode, a second electrode, and an insulator sandwiched therebetween. The first low-resistance region overlaps with the first gate. The first conductor is electrically connected to the first gate and is connected to a bottom surface of the first low-resistance region. The capacitor overlaps with the first low-resistance region. The second conductor is electrically connected to the drain. The third conductor overlaps with the second conductor and is connected to the second conductor and a side surface of the second low-resistance region.

Semiconductor device comprising stacked transistors

Semiconductor device comprising various thin-film transistors

To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Growing community of inventors

Kanagawa, Japan

Daisuke Matsubayashi