Fujitsu Corporation

Daisuke Matsubara

Hideaki Yamauchi

The semiconductor device comprises a semiconductor substrate; a capacitor elementformed above the semiconductor substrate and including a lower electrode, a capacitor insulation filmformed on the lower electrode and an upper electrodeformed on the capacitor insulation film; a shield layerformed at least either of above and below the capacitor element; and a lead-out interconnection layerformed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holesbeing formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.

Semiconductor device with a capacitor having upper and lower shield layers

The semiconductor device comprises a semiconductor substrate ; a capacitor element formed above the semiconductor substrate and including a lower electrode , a capacitor insulation film formed on the lower electrode and an upper electrode formed on the capacitor insulation film; a shield layer formed at least either of above and below the capacitor element; and a lead-out interconnection layer formed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holes being formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.

Growing community of inventors

Kawasaki, Japan

Daisuke Matsubara