Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Hitachi Microcomputer Engineering, Ltd.

Daisuke Makino

Hiroshi Suzuki

Asao Isobe

Hidetaka Sato

Shigeru Koibuchi

Shun-ichiro Uchimura

Yasuo Miyadera

Akio Nishikawa

Hidetaka Satou

Shunichiro Uchimura

Hiroyoshi Sekine

Kunihiro Tsubosaki

Hitoshi Yokono

Kazunari Suzuki

Takayuki Saito

Fusaji Shoji

Hiroshi Shiraishi

Mikio Sato

Shunichi Numata

Iwao Maekawa

Koji Fujisaki

Fumio Kataoka

Yoshiaki Wakashima

Junji Mukai

Isao Uchigasaki

Mitsumasa Kojima

Takeshi Komaru

Nobuo Ichimura

Hideo Inayoshi

Yutaka Takeda

Goro Tanaka

Akira Suzuki

Toul Kikuchi

Toyoichi Ueda

Seiki Harada

Atsushi Saiki

There are disclosed a process for producing a polyamide acid having at least one siloxane bond, which comprises carrying out the reaction of:

Process for producing polyamide acid having siloxane bonds and polyimide

In a resin packaged semiconductor device including a semiconductor element, the back side of which is bonded to a support and the front side of which has electrodes which are electrically connected to electroconductive portions by fine leads, when an adhesive composition comprising an epoxy resin, a novolak type phenolic resin, a solvent for the both resins and a powdery filler, and if necessary, a curing accelerator and a coupling agent, is used for binding the semiconductor and the support, the resulting semiconductor device is excellent in moisture resistance and corrosion resistance.

Semiconductor device and process for producing the same

A developing solution comprising at least two compounds selected from choline and quaternary ammonium salts is suitable for developing a negative-type photosensitive resin composition with exposure to a smaller light amount.

Process for producing a pattern with negative-type photosensitive

A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.

Polyimide precursor resin composition and semiconductor device using the

Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the aromatic polyimide polymer having a saturated water absorption rate of 1% or less. The polyimide polymer is exemplified as the polymer having the following recurring units: ##STR1## wherein R is an aliphatic or aromatic group; R.sub.1 and R.sub.2 are independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or CF.sub.3 ; and R.sub.3 to R.sub.6 are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. The disclosure is also concerned with resin encapsulated semiconductor devices in which the aromatic polyimide polymer of low water absorption is used as an insulating layer or passivation film.

Resin encapsulated semiconductor device

A liquid crystal display device containing a liquid crystal orientation controlling film made from a fluorine-containing polyimide-isoindoloquinazolinedione is high in a tilt angle and excellent in viewing properties.

Liquid crystal orientation controlling film and liquid crystal device

Fine patterns with high degree of resolution and high resistance to etching can be produced by coating a solution of a photosensitive composition comprising (a) an aromatic azide compound and (b) an alkaline-aqueous-solution-soluble polymer on a substrate, exposing predetermined portions of the coated photosensitive composition to ultraviolet light, developing with an alkaline aqueous solution to form a resist pattern, and etching the substrate using said resist pattern as a mask.

Process for producing fine patterns

4'-Azidobenzal-2-methoxyacetophenone is an excellent photosensitive compound and can give a photosensitive composition together with an alkaline-aqueous-solution-soluble polymer which can be insolubilized in an alkaline aqueous solution by photochemical curing with 4'-azidobenzal-2-methoxyacetophenone, and if necessary together with an organic solvent, said composition showing a very small change in viscosity with the lapse of long time.

Photosensitive composition with 4-azido-2'-methoxychalcone

There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

Composition for protective coating material

Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition. Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].

Photosensitive resin composition and method for forming fine patterns

There is disclosed an image-formable resinous composition comprising a poly(olefinsulfone) and a matrix polymer, in which the matrix polymer being a novolac phenol resin obtained from:

Electron beam or X-ray reactive image-formable resinous composition

A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.

Compositions of materials for forming protective film in semiconductor

In a semiconductor memory device comprising semiconductor memory elements having such a degree of integration in memory circuits as to produce soft errors by incident .alpha.-rays derived from a packaging material and a package which packages the memory elements and is made from the packaging material, when an .alpha.-rays shielding layer made from a resinous material, which may contain one or more high-purity fillers, containing a total amount of 1 part per billion or less of uranium and thorium is interposed between the memory elements and the package, the generation of soft errors is reduced remarkably.

Semiconductor memories with .alpha. shield

An improved method of preparing polyamide acid for processing of semiconductors from a diamine and a tetracarboxylic acid dianhydride with a diaminocarbonamide, is provided (1) by reacting the components at below 40.degree. C. until the reduced viscosity reaches above 0.5 dl/g. at 30.degree. C., and then, (2) by adjusting the reduced viscosity to more than 0.3 dl/g, at 30.degree.0 C. and the solution viscosity to 500-3,000 cps at 25.degree. C. by heating at 50.degree.-100.degree. C. By applying the polyamide acid obtained by the method to semiconductor apparatus, they get sufficient heat-resistance without pin holes, and their reliability may be greatly improved.

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Hitachi, Japan

Daisuke Makino