Kyocera Corporation

Daisuke Makibuchi

Kiyohiro Iioka

Kazuhiro Otsuka

Ikuo Obara

Kunihiko Muraoka

Hiroyuki Tanaka

Takanori Ikuta

Motoki Ito

Tsuyoshi Nakai

Yuuko Yokota

Yoshifumi Yamagata

Atsuomi Fukuura

Kouichi Maruta

Yasutaka Ohashi

Masaki Nambu

Yusuke Morimoto

An electronic component has a mounting board, a bump located on a mounting surface of the mounting board, a SAW device located on the bump and connected to the bump. The SAW device has an element substrate, an excitation electrode located on the first primary surface of the element substrate, a pad located on the first primary surface and connected to the excitation electrode, and a cover located above the excitation electrode and formed with a pad exposure portion on the pad. Further, the SAW device makes the top surface of the cover face the mounting surface, makes the bump be located in the pad exposure portion, and makes the pad abut against the bump.

Electronic component and acoustic wave device

An acoustic wave device according to one embodiment of the present invention has a base with a vibrating body, a sealing member which is joined to the base in a frame-shaped region surrounding the vibrating body and faces the vibrating body with a space therebetween, and an intermediate layer between the frame-shaped region of the sealing member and the base. The frame-shaped region has a recess and at least a portion of the intermediate layer is located inside the recess.

Acoustic wave device

A surface acoustic wave device configured by forming an oxide layeron a piezoelectric substratecomposed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.

Surface acoustic wave device and manufacturing method therefor, and communications equipment

A surface acoustic wave elementcomprises a piezoelectric substrate, IDT electrodesof an odd number not less than three formed along a propagation direction of surface acoustic waves that propagates on the piezoelectric substrate, wherein IDT electrodesof the odd number of IDT electrodesdisposed on both sides of an IDT electrodethat is located at the center are connected to first and second reference potential terminals, respectively, and the first and second reference potential terminalsandare formed asymmetrically with respect to a virtual central axis A that passes through the center of the IDT electrodelocated at the center and provided in a direction perpendicular to the propagation direction.

Surface acoustic wave element, surface acoustic wave device and communication device including the same

A plurality of IDT electrodestoeach having a large number of electrode fingers extending in a direction perpendicular to a propagation direction of a surface acoustic wave propagating on a piezoelectric substrateare arranged on the piezoelectric substratealong the propagation direction, and each of the two adjacent IDT electrodes out of the plurality of IDT electrodestocomprises a variable pitch section and a fixed pitch section. The electrode finger pitch in the variable pitch section gradually decreases toward the boundary between the two adjacent IDT electrodes, and the minimum electrode finger pitch portion in the two variable pitch sections is on one side spaced apart from the boundary. There can be provided a surface acoustic wave apparatus having a large pass bandwidth, having a low insertion loss, and having improved flatness in a pass band.

Surface acoustic wave resonator, surface acoustic wave device, and communications equipment

In a surface acoustic wave element, in which IDT electrodesand, a grounding electrode, etc. are formed one main surface of a piezoelectric substrate, resistorsmade of a semiconductor are provided to connection electrodesthat interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.

Growing community of inventors

Kyoto, Japan

Daisuke Makibuchi