Shin-etsu Chemical Co., Ltd.

Daisuke Kori

Tsutomu Ogihara

Takeru Watanabe

Jun Hatakeyama

Seiichiro Tachibana

Yusuke Biyajima

Takeshi Kinsho

Takashi Sawamura

Takayoshi Nakahara

Keisuke Niida

Kazumi Noda

Toshihiko Fujii

Yasuyuki Yamamoto

Katsuya Takemura

Naoki Kobayashi

Toshiharu Yano

Rie Kikuchi

Hironori Satoh

Kazunori Maeda

Shiori Nonaka

Yoshinori Taneda

Hiroko Nagai

Kenta Ishiwata

Takeshi Nagata

Osamu Watanabe

Yuji Harada

Motoaki Iwabuchi

Hiroyuki Urano

Yukio Abe

Satoru Kitano

Yusuke Kai

Taiki Kobayashi

Fumihiro Hatakeyama

Tsutomo Ogihara

The present invention is a composition for forming an organic film, containing: a material for forming an organic film shown by the following general formula; and an organic solvent, where Rrepresents a hydrogen atom, an allyl group, or a propargyl group, Rrepresents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group having 1 to 4 carbon atoms, an alkynyloxy group having 2 to 4 carbon atoms, an alkenyloxy group having 2 to 4 carbon atoms, a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a trifluoromethyl group, or a trifluoromethyloxy group, m=0 or 1, n=1 or 2, l=0 or 1, k represents an integer of 0 to 2, W represents a divalent organic group having 1 to 40 carbon atoms, and each V independently represents a hydrogen atom or a linking moiety. This provides a composition for forming an organic film which allows the formation of an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film-formability and adhesiveness to a substrate.

Composition for forming organic film, patterning process, and compound and polymer for forming organic film

A material for forming an organic film, containing: a compound shown by formula (1); and an organic solvent. In formula (1), Rrepresents one of the following formulae (2), Rrepresents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group, an alkynyloxy group, an alkenyloxy group, a linear, branched, or cyclic alkyl group, a trifluoromethyl group, or a trifluoromethyloxy group, 'n' represents 0 or 1, “m” represents an integer of 1 to 3, “p” represents 0 or 1, “l” represents an integer of 0 to 2, and W represents a divalent organic group having 2 to 40 carbon atoms. The objective: a compound which allows the formation of an organic underlayer film having excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, favorable film-formability and adhesiveness to a substrate; and a material for forming an organic film containing the compound.

Material for forming organic film, patterning process, and compound

A material for forming an organic film contains (A) a polymer having a repeating unit shown by the following general formula (1), and (B) an organic solvent. In the general formula (1), AR1, AR2, AR3, and AR4 each represent a benzene ring or a naphthalene ring; W1 represents a tetravalent organic group having 6 to 70 carbon atoms and at least one or more aromatic rings; and W2 represents a divalent organic group having 1 to 50 carbon atoms. An object of the present invention is to provide: a material for forming an organic film to enable high etching resistance and excellent twisting resistance without impairing the resin-derived carbon content; a patterning process using this material; and a polymer suitable for such a material for forming an organic film.

Material for forming organic film, patterning process, and polymer

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

Material for forming organic film, patterning process, compound, and polymer

The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where Wrepresents a tetravalent organic group, n1 represents an integer of 0 or 1, n2 represents an integer of 1 to 3, and Rrepresents any one or more of the following general formulae (1B). This provides an imide compound, where the compound is cured not only under air, but also under film formation conditions of inert gas, and can form an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formation and adhesion to a substrate, and a material for forming an organic film containing the compound.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

A material for forming an organic film containing a compound of general formula (1) in which X is an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 is an integer of 2 to 10, Ris at least one of formulae (2) to (4), where l1 is 0 or 1, and l2 is 0 or 1, and an organic solvent; an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Material for forming organic film, method for forming organic film, patterning process, and compound

A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of 'n' having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70≤a≤0.99 and 0.01≤b≤0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH)—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH)—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Resist underlayer film material, patterning process, and method for forming resist underlayer film

The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and Wrepresents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Coating-type composition for forming organic film, patterning process, polymer, and method for manufacturing polymer

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure. Thus, the present invention provides: a composition for forming an organic film the composition containing such a thermosetting polymer with high carbon content as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film

Composition for forming organic film, patterning process, and polymer

A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an 'm' number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH)—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; Rrepresents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. Rrepresents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. Rrepresents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. Rrepresents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and Rand Rare as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.

Composition for forming silicon-containing resist underlayer film and patterning process

A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where Wrepresents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and Ran alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.

A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0≤n2≤6,0≤n3≤6, and 1≤n2+n3≤6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of 'n' having 2 to 50 carbon atoms or an oxygen atom, 'n' represents an integer of 1 to 10, and Rindependently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Qrepresents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, Xrepresents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, Rrepresents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R' represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.

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Jyoetsu, Japan

Daisuke Kori