Meijo University

Daisuke Komori

Isamu Akasaki

Tetsuya Takeuchi

Motoaki Iwaya

Kaku Takarabe

A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

Growing community of inventors

Nagoya, Japan

Daisuke Komori