Hamamatsu-Photonics K.k.

Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Mirise Technologies Corporation

Tokai National Higher Education and Research System

National University Corporation Tokai National Higher Education and Research System

Daisuke Kawaguchi

Chiaki Sasaoka

Masatake Nagaya

Shoichi Onda

Jun Kojima

Keisuke Araki

Tsubasa Hirose

Keisuke Hara

Naoki Uchiyama

Hideki Shimoi

Makoto Nakano

Toshiki Yui

Ryota Sugio

Kazukuni Hara

Takeshi Sakamoto

Hiroshi Amano

Yasunori Igasaki

Kazuhiro Atsumi

Takafumi Ogiwara

Junji Ohara

Yoshitaka Nagasato

Atsushi Tanaka

Shinichi Hoshi

Masaharu Hoshikawa

Yotaro Wani

Hiroyuki Iwaki

Tadataka Edamura

Kazuue Fujita

Tatsuo Dougakiuchi

Ryuji Sugiura

Akio Ito

Takashi Ishida

Takashi Ushijima

Tomomi Aratani

Shosuke Nakabayashi

Hiroki Watanabe

Takafumi Tsunematsu

Kozo Kato

A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

Manufacturing method of semiconductor device

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.

Laser processing method, semiconductor member manufacturing method, and laser processing device

A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {c-plane, a {-m-plane, and a {-a-plane. One of the two pairs of opposing side surfaces is along another one of the {c-plane, the {-m-plane, and the {-a-plane. The other of the two pairs of opposing side surfaces is along the other of the {c-plane, the {-m-plane, and the {-a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

Semiconductor chip and method for manufacturing the same

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side; and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

Method for manufacturing semiconductor device, and semiconductor wafer

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.

Semiconductor chip, processed wafer, and method for manufacturing semiconductor chip

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

Gallium nitride semiconductor device and method for manufacturing the same

A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

Method for manufacturing gallium nitride semiconductor device

A method of manufacturing a quantum cascade laser beam source () includes: preparing a semiconductor stacked body (); forming a pair of first excavated portions (and) and a ridge portion which is interposed between the pair of first excavated portions (and); forming channel structures (and) and circumferential edge portions (and) which are formed to interpose the channel structures (and) between the ridge portion () and the circumferential edge portion; forming an electrode pattern () in contact with a first area () and forming an electrode pattern () in contact with a second area (); fixing a crystal growth surface side to a support substrate (); removing an Fe-doped (semi-insulating) InP single-crystal substrate (); fixing a Si substrate (); and peeling the support substrate ().

Method of manufacturing quantum cascade laser beam source

A silicon substratehas a main face in a (100) plane, whereby a fracturegenerated from a molten processed regionacting as a start point extends in a cleavage direction of the silicon substrate(a direction orthogonal to the main face of the silicon substrate). Here, a rear faceof an object to be processedA and a front faceof an object to be processed for separationA are bonded to each other by anode bonding, whereby the fracturereaches a front faceof the objectA continuously without substantially changing its direction. When generating a stress in the object for separationA, the fracturehas reached a rear faceof the object for separationA and thus easily extends toward the objectA.

Method for cutting object to be processed

The laser processing device comprises a laser light source emitting a laser light, a converging optical system converging the laser light at an object to be processed, and an aberration providing part for imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

Laser machining device and laser machining method

A laser processing device forms a modified region in an object to be processed by converging ultrashort pulse laser light at the object and comprises a laser light source emitting the laser light, a converging optical system converging the laser light emitted from the laser light source at the object, and an aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

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Hamamatsu, Japan

Daisuke Kawaguchi