Semiconductor Energy Laboratory Co., Ltd.

Daisuke Kawae

Shunpei Yamazaki

Yoshiyuki Kurokawa

Hiromichi Godo

Takayuki Ikeda

Satoshi Kobayashi

Kengo Akimoto

Masami Endo

Takayuki Inoue

Hidekazu Miyairi

Hideki Uochi

Munehiro Kozuma

Hiroki Dembo

Yasuhiro Jinbo

Koji Dairiki

Yoshiaki Oikawa

Hotaka Maruyama

Atsushi Miyaguchi

Yoshitaka Moriya

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

Semiconductor device and manufacturing method thereof

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle &#x3b8;1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle &#x3b8;2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20&#xb0; and less than 90&#xb0;, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle &#x3b8;of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle &#x3b8;of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20&#xb0; and less than 90&#xb0;, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1&#xd7;10/cmis used for an oxide semiconductor layer of an insulated gate transistor, in which a channel region is formed. The length of the channel formed in the oxide semiconductor layer is set to 0.2 &#x3bc;m to 3.0 &#x3bc;m inclusive and the thicknesses of the oxide semiconductor layer and the gate insulating layer are set to 15 nm to 30 nm inclusive and 20 nm to 50 nm inclusive, respectively, or 15 nm to 100 nm inclusive and 10 nm to 20 nm inclusive, respectively. Consequently, a short-channel effect can be suppressed, and the amount of change in threshold voltage can be less than 0.5 V in the range of the above channel lengths.

Semiconductor device

A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where &#x2208;/d is greater than or equal to 0.08 (nm) and less than or equal to 7.9 (nm) when the relative permittivity of a material used for the gate insulating layer is &#x2208;and the thickness of the gate insulating layer is d. The distance between the source electrode and the drain electrode is greater than or equal to 10 nm and less than or equal to 1 &#x3bc;m.

Semiconductor device with oxide semiconductor layer

An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In&#x2014;Sn&#x2014;O-based oxide semiconductor layer including SiOis used for a channel formation region. In order to reduce contact resistance between the In&#x2014;Sn&#x2014;O-based oxide semiconductor layer including SiOand a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In&#x2014;Sn&#x2014;O-based oxide semiconductor layer including SiO. The source region or drain region and a pixel region are formed using an In&#x2014;Sn&#x2014;O-based oxide semiconductor layer which does not include SiO.

Semiconductor device comprising oxide semiconductor layer

A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5&#xd7;10/cm, the work function &#x3c6;ms of a source electrode in contact with the oxide semiconductor, the work function &#x3c6;md of a drain electrode in contact with the oxide semiconductor, and electron affinity &#x3c7; of the oxide semiconductor satisfy &#x3c6;ms&#x2266;&#x3c7;&#x3c;&#x3c6;md. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.

Non-linear element, display device including non-linear element, and electronic device including display device

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Semiconductor device, display device, and electronic appliance

Semiconductor device and method for manufacturing the same

A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer.

Semiconductor device and display device

In a method for manufacturing a semiconductor device including a transistor and a conductive film over a substrate, a first insulating film and a second insulating film are formed over the transistor and the conductive film sequentially. Then, an opening and a recessed portion are formed in the second insulating film using one multi-tone photomask, wherein the opening is deeper than the recessed portion in the second insulating film. By using the opening, a first contact hole exposing one of the electrodes of the transistor is formed through the first and second insulating films and, by using the recessed portion, a second contact hole exposing the first insulating film is formed through the second insulating film. Moreover, an electrode is formed on and in contact with the one of the electrodes in the first contact hole and the first insulating film in the second contact hole.

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Atsugi, Japan

Daisuke Kawae