Mitsubishi Electric Corporation

Thk Co., Ltd.

Daisuke Kawabata

Yoshimasa Endo

Kenji Hidaka

Osamu Suzuki

Hiroaki Tatsumi

Sho Kumada

Yoshikazu Matsuo

Toshiya Watanabe

Yasunari Hino

Shinji Kawabata

Object is to reduce the number of paths through which moisture enters in a semiconductor device. A semiconductor device includes a semiconductor element, a case housing the semiconductor element, a sealing material filled in the case, a low moisture permeable sheet covering the sealing material, and a lid covering an opening of the case. The low moisture permeable sheet is made of a low moisture permeable material having moisture permeability of 1 g/m×24 Hr or less. The low moisture permeable sheet is interposed, at the peripheral edge thereof, between the case and the lid.

Semiconductor device

An object of the present invention is to ascertain parts of an object that are approachable by finger portions of a hand mechanism. In an image information processing device, a housing container is retrieved from an image by using a first retrieval frame, and an object is retrieved from the image by using a second retrieval frame. A plurality of determination points are set in advance on the second retrieval frame, and a predetermined approach direction is set for each determination point. A determination is then made as to whether or not the finger portions of the hand mechanism can be caused to approach parts of one object, existing within the second retrieval frame, that correspond respectively to the determination points set on the second retrieval frame from the predetermined approach directions set in relation to the determination points.

Image information processing device, gripping system, and image information processing method

Robot arm apparatus

A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Semiconductor device and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.

Method for manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Daisuke Kawabata