Sony Semiconductor Solutions Corporation

Netzsch-gerätebau Gmbh

Daisuke Ito

Kenichi Murata

Masaki Haneda

Kazuyuki Tomida

Tsuyoshi Suzuki

Kenta Sato

Hiroki Takaishi

Ryoichi Kinoshita

Takaaki Minami

Toshiko Hayashi

A first semiconductor element according to one embodiment of the present disclosure includes an element substrate including an element region, a peripheral region, a readout circuit substrate, a first electrode, a second electrode, and an insulating layer. A wiring layer and a first semiconductor layer including a compound semiconductor material are provided as a stack in the element region. The peripheral region is outside the element region. The readout circuit substrate is opposed to the first semiconductor layer with the wiring layer interposed therebetween, and is electrically coupled to the first semiconductor layer with the wiring layer interposed therebetween. The first electrode is provided in the wiring layer and is electrically coupled to the first semiconductor layer. The second electrode is opposed to the first electrode with the first semiconductor layer interposed therebetween. The insulating layer is provided on the second electrode and has a non-reducing property.

Semiconductor element

An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

Three-dimensionally structured imaging device

Growing community of inventors

KANAGAWA, Japan

Daisuke Ito