Oki Electric Industry Co., Ltd.

National Institute for Materials Science

Tamura Corporation

Koha Co., Ltd.

Lapis Semiconductor Co., Ltd.

Oki Semiconductor Co., Ltd.

Daisuke Inomata

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Kazuo Aoki

Hiroaki Sano

Yusuke Arai

Hiroyuki Sawano

Seitaro Yoshida

Makoto Watanabe

Akira Ito

Yoshihiro Yamashita

Kazuyuki Iizuka

Kentaro Tone

Mikihiko Uwani

Rikiya Suzuki

A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 μm and not more than 0.98 μm. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 μm and not more than 3 μm.

Wavelength conversion member

Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (YLuGdCe)AlO(0&#x2264;x&#x2264;0.9994, 0&#x2264;y&#x2264;0.0669, 0.001&#x2264;z&#x2264;0.004, &#x2212;0.016&#x2264;a&#x2264;0.315) and a particle diameter (D50) of not less than 20 &#x3bc;m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Phosphor and production method thereof phosphor-including member, and light emitting device or projector

A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm.

Light emitting device

A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of YGdCeAlO(0.03&#x2264;x&#x2264;0.2, 0.003&#x2264;y&#x2264;0.2, &#x2212;0.2&#x2264;w&#x2264;0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25&#xb0; C. to 100&#xb0; C.

Phosphor, method for manufacturing same, and light-emitting device

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

A semiconductor device having a structure that can reduce stress due to difference in coefficients of thermal expansion and prevent or suppress generation of cracks, and a semiconductor device manufacturing method, are provided. The semiconductor device includes a single crystal silicon substrate having a main face on which semiconductor elements are formed and a side face intersecting with the main face, and a sealing resin provided covering at least a portion of the side face. The side face covered by the sealing resin is equipped with a first face with a plane direction forming an angle of &#x2212;5&#xb0; to +5&#xb0; to the plane direction of the main face.

Semiconductor device

An infrared detecting device is provided that is capable of improving device characteristics thereof by narrowing the width of each beam portion. The infrared detecting device has an infrared detection portion having a thermoelectric transducing part formed over a semiconductor substrate via an air gap interposed therebetween, and the beam portions which are formed over the semiconductor substrate via the air gap interposed therebetween, support the infrared detection portion and electrically connect between the infrared detection portion and the semiconductor substrate, wherein each of the beam portions has an insulating material film and a conductive material layer exposed from the insulating material film to a side surface of each beam portion.

Infrared detecting device and manufacturing method thereof

A semiconductor device includes a semiconductor substrate and a capacitor which is disposed on a principal surface of the semiconductor substrate. The capacitor includes a lower electrode film disposed on the principal surface of the semiconductor substrate, a dielectric film disposed on the lower electrode and an upper electrode film disposed on the dielectric film. The semiconductor device further includes an interconnection film which includes a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film. Directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film. Each of the upper electrode film and the interconnection film may include at least one of platinum and iridium. Also, there is provided a method of manufacturing the semiconductor device.

Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof

A semiconductor device includes a substrate which has a main surface and an alignment mark which is formed on the main surface and which has a pattern, wherein the pattern in a plane view has a shape that is obtained by eliminating corners from a polygon.

A method of fabricating a ferroelectric capacitor that can inhibit ferroelectric characteristics from deteriorating includes forming a lower electrode film over from on a top surface of a plug disposed in a silicon oxide film to on the silicon oxide film; forming a paraelectric film so as to frame-likely cover a periphery of a surface of the lower electrode film with a predetermined width; forming a ferroelectric film over from on the exposed lower electrode film from an opening of the paraelectric film to on the paraelectric film in the surroundings of the exposed lower electrode film; forming an upper electrode film, in a surface of the ferroelectric film, over from on a region that faces a contact surface between the lower electrode film and the ferroelectric film to on a region that faces the paraelectric film; and etching through a mask that covers, in a surface of the upper electrode film, from a region that faces the contact surface to a region that faces the paraelectric film.

Method of fabricating a ferroelectric capacitor having a ferroelectric film and a paraelectric film

Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, include an insulating film, a groove formed in the insulating film during a step of defining a contactor hole in a device part, a metal film formed at least on sidewalls of the groove during a step of burying the contactor hole in the device part, and a cover film formed on the insulating film to cover the metal film formed in the groove for prevention of oxidation of the metal film during heat treatment applied in an oxygen atmosphere.

Semiconductor device alignment mark having oxidation prevention cover film

According to the present invention, a method of manufacturing a ferroelectric capacitor using a ferroelectric thin film, includes steps of: forming a lower conductive layer on a semiconductor substrate; coating solution of ferroelectric coking including organic solvent and organometallic complex on the lower conductive layer; performing a heating process for coated solution at temperature, to decompose said organometallic complex in solution of ferroelectric coking, or more and ferroelectric crystallization temperature or below to form said metal compound thin film; forming an upper conductive layer on said metal compound thin film; and performing a heating process for said metal compound thin film at ferroelectric crystallization temperature or more to form said ferroelectric thin film.

Method of manufacturing ferroelectric capacitor

A method of fabricating a semiconductor device according to the invention comprises forming a capacitor comprising a lower electrode formed on a semiconductor substrate, a capacitive insulator made up of a metal oxide film, formed on the lower electrode, and an upper electrode formed on the capacitive insulator; forming a metal pattern to be electrically connected to the electrodes of the capacitor; forming a first protection film which coats at least a side face of the metal pattern; and forming a water constituents diffusion preventive film on the side face and top face of the metal pattern through the intermediary of the first protection film. As a result, a method of fabricating a ferroelectric memory capable of protecting a ferroelectric capacitor from water constituents evolved during a fabrication process, and maintaining satisfactory memory characteristics can be provided.

Method of fabricating semiconductor device

A method of fabricating a semiconductor device according to the invention includes forming a capacitor comprising a lower electrode formed on a semiconductor substrate, a capacitive insulator made up of a metal oxide film, formed on the lower electrode, and an upper electrode formed on the capacitive insulator; forming a metal pattern to be electrically connected to the electrodes of the capacitor; forming a first protection film which coats at least a side face of the metal pattern; and forming a water constituents diffusion preventive film on the side face and top face of the metal pattern through the intermediary of the first protection film. As a result, a method of fabricating a ferroelectric memory capable of protecting a ferroelectric capacitor from water constituents evolved during a fabrication process, and maintaining satisfactory memory characteristics can be provided.

Growing community of inventors

Tokyo, Japan

Daisuke Inomata