Tdk Corporation

Toppan Printing Co., Ltd.

Daisuke Inokuchi

Minoru Fujita

Jun Hirabayashi

Katsumi Kawasaki

Jun Arima

Makio Kondo

Takehito Tsukamoto

Takao Minato

Masayuki Ode

Kenta Yotsui

A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Single-crystal growing crucible, single-crystal production method and single crystal

An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substratemade of gallium oxide, a drift layermade of gallium oxide and provided on the semiconductor substrate, an anode electrodebrought into Schottky contact with the drift layer, and a cathode electrodebrought into ohmic contact with the semiconductor substrate. The drift layerhas an outer peripheral trenchformed at a position surrounding the anode electrodein a plan view. An electric field is dispersed by the presence of the outer peripheral trenchformed in the drift layer. This alleviates concentration of the electric field on the corner of the anode electrode, making it unlikely to cause dielectric breakdown.

Schottky barrier diode

A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

Die for EFG-based single crystal growth, EFG-based single crystal growth method, and EFG single crystal

An optical-electric printed wiring board includes an electric wiring substrate having electric interconnects, and an optical wiring layer stacked on the electric wiring substrate and having a surface on which an optical part is mounted. The optical wiring layer includes a core for propagating light, a clad for sandwiching the core, and a mirror for reflecting light propagating in the core toward an optical part mounted on the optical wiring layer, or reflecting light from an optical part into the core. The electric wiring substrate includes conductive setting portions each of which extends through the optical wiring layer in the direction of stacking and has an end face on which an optical part is set. These conductive setting portions obtain electrical conduction between the optical part and the electric interconnects.

Optical-electric printed wiring board, printed circuit board, and method of fabricating optical-electric printed wiring board

Growing community of inventors

Tokyo, Japan

Daisuke Inokuchi