Sumitomo Chemical Company, Limited

Daisuke Inokuchi

Giovanni Ferrara

Sho Kanesaka

Ryoichi Hiraoka

Akiko Kishida

A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element () including an anode (), a cathode (), and an active layer () provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a Cfullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 &#x3bc;m to 170 &#x3bc;m per square micrometer of the area of the binarized image.

Photoelectric conversion element and method for producing the same

An object is to provide an organic photoelectric conversion element having high durability. The present invention provides an organic photoelectric conversion element having an active layer between a cathode and an anode, characterized in that, the organic photoelectric conversion element includes a layer including a cured product obtained by curing a thermosetting resin composition between the anode and the active layer, and a transmittance of light with a wavelength of 380 nm to 780 nm is 10% or higher. The present invention provides the organic photoelectric conversion element in which the thermosetting resin composition includes one or more selected from the group consisting of polythiophene and derivatives thereof and a polymer compound including a repeating unit having an aromatic amine residue.

Organic photoelectric conversion element, and solar cell module and sensor provided with the same

To reduce a dark current. In a photoelectric conversion element () including an anode (), a cathode (), and an active layer () provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 &#x3bc;m or more and less than 200 &#x3bc;m per square micrometer of the area of the binarized image.

Growing community of inventors

Osaka, Japan

Daisuke Inokuchi