Sony Corporation

Daisuke Imanishi

Atsushi Toda

Hironobu Narui

Yoshiro Takiguchi

Shigeki Miyazaki

Kaori Naganuma

A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.

Semiconductor laser element and semiconductor laser device

A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

Laser diode

A method for growth of II-VI compound semiconductors grows a p-type II-VI compound semiconductor such as a p-type ZnSe by vapor deposition such as metallorganic chemical vapor deposition and molecular beam epitaxy using gaseous materials. The method uses as a p-type dopant an organic compound including at least one nitrogen atom and at least two groups of atoms each having a molecular weight larger than 12 and both combined with the nitrogen atom. One of such organic compounds is di-isopropylamine.

Method for growth of II-VI compound semiconductors

An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact with the first and second cladding layers and the active layer. The stripe ridge extends in a &lt;01-1&gt; axis direction, and the first and second cladding layers and the active layer jointly provide a semiconductor stripe region of triangular cross section sandwiched between (111) A faces. A method of manufacturing the SDH semiconductor laser is also disclosed.

Growing community of inventors

Kanagawa, Japan

Daisuke Imanishi