Renesas Electronics Corporation

Daisuke Iijima

Kazuhito Ayukawa

Nobutoshi Kasai

Yuji Takehara

Katsutoshi Bito

A method of detecting a fault of a semiconductor device including a power device mounted on a metal base and a drive circuit for driving the power device, the method detecting a fault of the semiconductor device beforehand based on an increase in thermal resistance between the metal base and the power device. A state of the power device is measured immediately before and after the power device is driven by the drive circuit. A temperature difference of the power device before and after driving is calculated according to the result of measurement. An increase in thermal resistance between the metal base and the power device is detected based on the temperature difference and an amount of electricity inputted to the power device in the driving period, and a fault of the semiconductor device is detected beforehand according to the increase.

Semiconductor device and fault detecting method

Switching loss is reduced by decreasing the switching frequency of a PFC power supply in light load condition, whereas the switching frequency is maintained high in heavy load operation. Efficiency in light load operation is thus improved without enlarging a boosting inductor and an output smoothing capacitor. A capacitor is provided in a triangular wave generating circuit and the triangular wave generating circuit outputs a triangular wave by charging and discharging this capacitor. Charging and discharging of the capacitor are controlled by an oscillation frequency control circuit output current which is input to a comparator.

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Kanagawa, Japan

Daisuke Iijima