Sanyo Electric Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Daisuke Ide

Akira Ibaraki

Takenori Goto

Nobuhiko Hayashi

Mitsuaki Morigami

Ryo Goto

Mitsuaki Matsumoto

Youhei Murakami

Hitoshi Sakata

Koutarou Furusawa

Keiichi Yodoshi

Teruaki Miyake

Kenichi Matsukawa

Yasuyuki Bessho

Masayuki Shono

Hiroki Hamada

Kazushi Mori

Atsushi Tajiri

Minoru Sawada

Shoji Honda

Yasuaki Inoue

Masato Shigematsu

Isao Hasegawa

Toru Ishikawa

Takatoshi Ikegami

Atushi Tajiri

Koji Suzuki

Takahiro Mishima

Naoya Sotani

Yukihiro Noguchi

Yuji Hishida

Hiroyuki Mori

Shoichiro Matsumoto

Tatsuya Kunisato

Toshiaki Baba

Yosuke Ishii

Yoshiyuki Ishizuka

Yoichiro Aya

Satoru Shimada

Yasutaka Kobayashi

Hiroryuki Mori

An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

Solar cell and method of manufacturing the same

A method of manufacturing a solar cell includes: forming a solar cell substrate having one main surface and the other main surface and having a p-type surface and an n-type surface which are exposed on one region and another region in the one main surface, respectively; forming seed layers in an electrically separated state on the p-type surface and the n-type surface, respectively; and forming a plated film on the seed layer on each of the p-type surface and the n-type surface by an electrolytic plating method.

Method of manufacturing solar cell

A solar cell includes a solar cell substrate including a principal surface on which a p-type surface and an n-type surface are exposed, a p-side electrode formed on the p-type surface and including a first linear portion linearly extending in a first direction, and an n-side electrode formed on the n-type surface and including a second linear portion linearly extending in the first direction and arranged next to the first linear portion in a second direction orthogonal to the first direction. Corners of a tip end of at least one of the first and second linear portions are formed in a chamfered shape.

This photoelectric conversion device () is provided with: an n-type monocrystalline silicon substrate (); an IN layer () and an IP layer () formed on the back surface of the n-type monocrystalline silicon substrate (); an n-side electrode () containing an n-side underlayer (), an n-side primary conductive layer (), and an n-side protective layer (); and a p-side electrode () containing a p-side underlayer (), a p-side primary conductive layer (), and a p-side protective layer (). The n-side primary conductive layer () is formed in a manner so as not to cover the lateral surface of the n-side underlayer (), and is covered at the lateral surface by the n-side protective layer (). The p-side electrode () is formed in such a manner the lateral surface of the p-side underlayer () is not covered, and the lateral surface is covered by the p-side protective layer ().

Photoelectric conversion device and method for producing same

A solar cell module is provided with a plurality of solar cells and a wiring material. Each solar cell includes a p-side electrode and an n-side electrode arranged on one principal surface thereof. For each pair of adjacent solar cells, the wiring material electrically connects the p-side electrode of one solar cell and the n-side electrode of the other solar cell. Surface layers of the p-side electrodes and the n-side electrodes comprises, respectively, plating layers each containing at least one power-supplied point. The wiring material is bonded to the solar cells at regions each of which at least includes the power-supplied point.

Solar cell module and manufacturing method therefor

The present invention improves the reliability of back contact solar cell modules that are electrically connected by means of wiring material. A solar cell module () is provided with a plurality of solar cells (), and wiring material (). Each solar cell () has a p-side electrode () and an n-side electrode () arranged on a single main surface (). Among adjacent solar cells (), the wiring material () electrically connects the p-side electrode () of one solar cell () to the n-side electrode () of another solar cell (). The surface layers of the p-side electrode () and the n-side electrode () include plating layers () which have at least one power supply point (). The wiring material () is bonded to the plating layers such that the wiring material overlaps a portion of the power supply points () of each solar cell (), and does not overlap another portion of the power supply points ().

Solar cell module

A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

Solar cell and method for manufacturing solar cell

A solar cell modulecomprises a light reflection memberplaced on the light receiving surface of a n-type semiconductor substrateand having a light reflecting surfaceA facing the light receiving surface protection member. The light reflection memberis positioned on an opposite side to the n-side connecting electrodeacross the n-type semiconductor substrate

Solar cell module, solar cell and solar cell module manufacturing method

A method of manufacturing a solar cell, including: forming a first conductivity type semiconductor layer extending along a predetermined direction on aback surface of a semiconductor substrate that has a light-receiving surface and the back surface opposite to the light-receiving surface, the first-conductivity-type semiconductor layer being divided into plural island-shaped sections arranged side by side in the predetermined direction; forming a semiconductor layer of a second conductivity type in the predetermined direction on the back surface; and forming conductive layers respectively on the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer by using a conductive paste, the conductive layer to be formed on the first-conductivity-type semiconductor layer being formed by a printing method such that the conductive layer to be formed on the first-conductivity-type semiconductor layer extends on a line of the plural island-shaped sections to bridge adjacent two of the plural island-shaped sections.

A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Display capable of inhibiting instable operation of a transitor resulting from fluctuation of the potential of a corresponding shielding film

The cathode of an optical element, which is formed by a substrate, an anode formed on the substrate, a luminous element layer and a cathode, is made of aluminum whose surface orientation is substantially uniform. Oxygen content of the aluminum is substantially less or equal to 1&#xd7;10atoms/cm.

Optical element and manufacturing method therefor

A first molybdenum layer made of a molybdenum film, an aluminum conductive layer made of an aluminum-neodymium alloy film, a second molybdenum layer made of a molybdenum film and an insulating film layer made of a silicon dioxide film are stacked, in this order from the bottom to the top, on an insulating substrate made of glass.

Display apparatus

A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Display unit and method of fabricating the same

A method of fabricating a semiconductor device capable of fabricating a semiconductor device including a polycrystalline semiconductor film having excellent characteristics with a high yield is provided. A first amorphous semiconductor film is formed on a substrate. A conductive film is formed on the first amorphous semiconductor film. The conductive film is irradiated with an electromagnetic wave such as a high-frequency wave or a YAG laser beam thereby making the conductive film generate heat and converting the first amorphous semiconductor film to a first polycrystalline semiconductor film through the heat. Thus, polycrystallization is homogeneously performed without dispersion through the heat from the conductive film irradiated with the electromagnetic wave. Consequently, an excellent first polycrystalline silicon film can be formed with an excellent yield.

Growing community of inventors

Kobe, Japan

Daisuke Ide