Sony Corporation

Sony Semiconductor Solutions Corporation

Daisuke Hobara

Nobuyuki Matsuzawa

Masanori Iwasaki

Ken Ozawa

Nozomi Kimura

Michinori Shiomi

Takeru Bessho

Hideki Ono

Yosuke Saito

Taichi Natori

Yoshiaki Obana

Yuta Hasegawa

Shinichiro Kondo

Atsushi Wakamiya

Shintaro Hirata

Syuuiti Takizawa

Eri Igarashi

Hisaya Hara

Yuko Taki

The present technology relates to a solid-state image sensor, a photoelectric conversion film, an electron blocking layer, an imaging apparatus, and an electronic device that can appropriately photoelectrically convert light of specific wavelengths with high spectral characteristics and high photoelectric conversion efficiency. A photoelectric conversion layer or an electron blocking layer is configured with a photoelectric conversion film made of only a compound represented by Chemical Formula (1). The present technology can be applied to a solid-state image sensor.

Solid-state image sensor, photoelectric conversion film, electron blocking layer, imaging apparatus, and electronic device

A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Photoelectric conversion device and imaging device

An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Imaging apparatus and camera system with optical member

A hologram recording composition includes at least: a photopolymerizable compound containing at least a first photopolymerizable monomer; binder resin that is inactive to photopolymerization; and a photopolymerization initiator. A change in polarity of the first photopolymerizable monomer by photopolymerization reduces compatibility with the binder resin of the photopolymerizable compound than that before polymerization, the compatibility of the photopolymerizable compound before the polymerization being high.

Hologram recording composition, hologram recording medium, and method of producing hologram recording medium

A dispersion material includes: a plurality of semiconductor nanoparticles; and an adsorption molecule configured to selectively absorb light having a predetermined wavelength and adsorbed to each of the plurality of semiconductor nanoparticles, the adsorption molecule having a plane aligned to be non-parallel to a direction from a center portion of each of the plurality of semiconductor nanoparticles toward an adsorption portion of each of the plurality of semiconductor nanoparticles.

Dispersion material, photoelectric conversion device, and imaging unit

Imaging apparatus and camera system for improving image quality

Imaging apparatus and camera system

Imaging apparatus and camera system with light-transmitting laminated material

To provide an image capturing element and an image capturing apparatus in which an image capturing optical system can be thinned without degrading image capturing properties. An image capturing element according to an embodiment of the present technology includes an on-chip lens, a low refractive index layer and an infrared absorption layer. The on-chip lens is composed of a high refractive index material. The low refractive index layer is formed flatly on the on-chip lens and is composed of a low refractive index material. The infrared absorption layer is laminated above the low refractive index layer and is composed of an infrared absorption material.

Image capturing element and image capturing apparatus for removing infrared components from light

In one example embodiment, a substrate having a smooth surface is prepared, a fine-particle layer including fine particles which are arranged along the surface is formed, and substituent molecules are bonded to the fine particles to change the fine-particle layer to a fine-particle assembly layer including the fine particles to which the substituent molecules are bonded, so that the center-to-center distance between the adjacent fine particles is increased to form a three-dimensional microstructure in which a portion of the fine-particle assembly layer is raised from the surface or the center-to-center distance between the adjacent fine particles is decreased to form a microstructure in which the fine-particle assembly layer is absent in a portion of the surface, the substrate being exposed in the absent portion.

Fine-particle structure/substrate composite member and method for producing same

A semiconductor device is disclosed. The device includes: oppositely disposed plural electrodes; a semiconductor molecule disposed such that one end part thereof binds to a surface of the electrode in each of the opposing electrodes; and a conductor for electrically connecting at least a part of the other end part of the semiconductor molecule disposed in one electrode of the opposing electrodes to at least a part of the other end part of the semiconductor molecule disposed in the other electrode of the opposing electrodes. The conductivity between the opposing electrodes is substantially determined by the conductivity of the semiconductor molecule electrically connected to the conductor between the opposing electrodes in the semiconductor molecules.

Semiconductor device comprising semiconductor molecules and a conductor formed of fine particles and linker molecules

A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particle layer in a solution to form a semiconductor thin film.

Growing community of inventors

Kanagawa, Japan

Daisuke Hobara