Toyoda Gosei Co., Ltd.

Daisuke Hiraiwa

Takehiko Okabe

Remi Ohba

Hironao Shinohara

Munetaka Watanabe

Mamoru Kitsukawa

A semiconductor light-emitting device () of the present invention includes: a substrate (); a laminated semiconductor layer () containing a light-emitting layer, which is formed on the substrate (); a first electrode () formed on the upper surface () of the laminated semiconductor layer (); and a second electrode () formed on an exposed surface () that is formed by partially cutting the laminated semiconductor layer (), wherein the first electrode () includes a transparent electrode () containing a hole portion () through which the upper surface () of the laminated semiconductor layer () is exposed, a junction layer () formed on a bottom surface () and an inner wall () of the hole portion (), and a bonding pad electrode () formed to cover the junction layer ().

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp

It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.

Semiconductor light-emitting element, electrode structure and light-emitting device

Disclosed is a semiconductor light emitting chip () that is composed of: a substrate (), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces () configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions () in the side surfaces (), the modified regions being formed by laser radiation; and a light emitting element (), which is provided on the substrate front surface () of the substrate (). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.

Semiconductor light emitting chip and method for processing substrate

In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step), forming first modified regions extending toward the first direction and second modified regions extending along the substrate front surface and toward a second direction different from the first direction in the substrate (stepand step), and dividing the element-group formation substrate using the first modified regions and the second modified regions (step).

Method for producing semiconductor light-emitting chip

A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode () formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode () includes a junction layer () and a bonding pad electrode () formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (), () and (), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions () and () of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp

Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (), in which an n-type semiconductor layer (), a light-emitting layer () and a p-type semiconductor layer () are sequentially layered, is formed on a single-crystal underlayer () which is formed on a substrate (). A light-transmitting electrode () is formed on the p-type semiconductor layer (). An insulation layer () is formed on at least a part of the p-type semiconductor layer (), and the light-transmitting electrode () is formed to cover the insulation layer (). A positive electrode bonding pad () is provided in a position A corresponding to the insulation layer () provided on the p-type semiconductor layer (), on a surface () of the light-transmitting electrode (). A sheet resistance of the n-type semiconductor layer () is lower than a sheet resistance of the light-transmitting electrode ().

Growing community of inventors

Ichihara, Japan

Daisuke Hiraiwa