Sharp Kabushiki Kaisha Corporation

Daisuke Hanaoka

Masaya Ishida

Mototaka Taneya

Atsushi Ogawa

Takatomo Sasaki

Tatsuya Morioka

Yusuke Mori

Yoshihiko Tani

Yoichi Kawakami

Shigeo Fujita

Takuro Ishikura

Masafumi Harada

Shigetoshi Ito

Yuhzoh Tsuda

Kunihiro Takatani

Toshio Hata

Katsuki Furukawa

Takayuki Yuasa

Masafumi Kondo

Satoshi Sugahara

Takeshi Horiguchi

Susumu Ohmi

Yoshika Kaneko

Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem, a submountfixed to the stem, a nitride semiconductor laser chipmounted on the submount, pinsandfixed to the stembut insulated therefrom, a wire connecting the pinto a p-electrode of the nitride semiconductor laser chip, a wire connecting the pinto an n-electrode of the nitride semiconductor laser chip, and a capenclosing the nitride semiconductor laser chipand the submountand fixed to the stem

Nitride semiconductor laser device mounted on a stem

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphorescent portion, and method of producing the same

A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

Cap member and semiconductor device employing same

The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.

Nitride semiconductor devices including a separation preventing layer

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source

A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Method for manufacturing laser devices

Light-emitting apparatus, phosphor and method of producing it

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Semiconductor light emitting device and method for fabricating same

A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most &#x2212;30&#xb0; C. and an oxygen concentration of at most 100 ppm.

Nitride semiconductor laser device

A nitride semiconductor laser device chip has a nitride semiconductor stacked-layered structure including an n-type layer, an active layer and a p-type layer stacked successively on a main surface of a nitride semiconductor substrate. A ridge stripe structure is formed in a portion of the p-type layer. The chip has a length Lof more than 500 &#x3bc;m in a longitudinal direction of the stripe structure and a length Lof more than 200 &#x3bc;m in a width direction of the stripe structure, and L/Lis more than 2.5.

Nitride semiconductor laser device chip and laser apparatus including the same

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III&#x2013;V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphor, and method of producing it

The nitride semiconductor light emitting device includes a nitride semiconductor underlayer () grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer () including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer () and a p type layer () over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.

Nitride semiconductor light emitting element and production thereof

A nitride semiconductor laser chipis fixed to a submountserving as a mount member with solderThe submountis made of a material having a thermal expansion coefficient higher than that of a nitride semiconductor substrate, and has a thickness equal to or greater than 1.2 times the thickness of the layered nitride semiconductor structure composed of an n-type GaN substrateand a layered nitride semiconductor portionBetween the n-type GaN substrateand the submountis laid a metal film having a thickness of from 1 to 50 &#x3bc;m.

Growing community of inventors

Kyoto, Japan

Daisuke Hanaoka