Denso Corporation

Daisuke Fukuoka

Kuniaki Mamitsu

Takanori Teshima

Tetsuo Fujii

Takahiro Hirano

Wataru Kobayashi

Tomomi Okumura

Masayoshi Nishihata

Kengo Oka

Akira Tai

Kazuo Akamatsu

Eiji Hayashi

Shuji Yoneda

Takumi Nomura

Tomoaki Mitsunaga

Takamichi Sakai

Ken Sakamoto

Yuuji Ootani

In a semiconductor device, a semiconductor element has a front electrode and a back electrode. The back electrode is connected to a wiring member through a bonding member. Wire pieces are disposed in the bonding member, and bonded to a bonding surface of the wiring member to protrude toward the semiconductor element. The bonding member has, in a plan view, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region. At least four wire pieces are disposed in the outer peripheral region at positions corresponding to at least four respective corners of the semiconductor element. At least one wire piece is disposed to extend toward the element center in the plan view.

Semiconductor device having wire pieces in bonding member

In an electronic device, an inner lead of a signal terminal includes a base member, and a film on a surface of the inner lead adjacent to a bonding surface. The film includes a metal thin film disposed on the surface of the base member and having a portion to which a bonding wire is connected, and an oxide film made of an oxide of the same metal as a metal being a main component of the metal thin film, and disposed in at least a part of a region of the metal thin film, excluding a connection region of a bonding wire. The oxide film includes an uneven oxide film having a surface with continuous asperities formed by irradiating the metal thin film with pulsed laser light. The uneven oxide film is disposed in at least a part of a front end region of the bonding surface.

Electronic device and method for manufacturing the same

A semiconductor device includes a semiconductor chip, a metal member, and a terminal. The semiconductor chip has an electrode. The metal member is electrically connected to the electrode. The terminal extends from the metal member to be connected to an external connection member. The terminal has a width-increased portion in a predetermined area beginning from a first end of the terminal that connects to the metal member.

Semiconductor device

A semiconductor device includes a plate-shaped semiconductor element and an electrically insulating resin member. The semiconductor element has a front-surface electrode on its front surface and a back-surface electrode on its back surface. The resin member encapsulates the semiconductor element. The front-surface electrode is exposed to a front side of an outer surface of the resin member. The back-surface electrode is exposed to a back side of the outer surface of the resin member. The resin member has an extension portion that covers the entire side surface of the semiconductor element and extends from the side surface of the semiconductor element in a direction parallel to the front surface of the semiconductor element.

Semiconductor device with surface electrodes

A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

Semiconductor device having semiconductor chip and metal plate

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Kariya, Japan

Daisuke Fukuoka