Sumco Techxiv Corporation

Komatsu Denshi Kinzoku Kabushiki Kaisha

Daisuke Ebi

Shigeo Morimoto

Hiroshi Monden

Kentaro Nakamura

Yoshinobu Hiraishi

Toshirou Kotooka

Kengo Hayashi

Hiroshi Inagaki

Shigeki Kawashima

Makoto Kamogawa

Toshiaki Saishoji

Tadayuki Hanamoto

Tadashi Hata

Makato Kamogawa

Koichi Shimomura

Yoshiyuki Suzuki

A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.

Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt

Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Apparatus for pulling single crystal by CZ method

A device for producing single-crystal ingot, provided with coolers ( ) using a piping system through which cooling water failure caused by water leakage and at the same time to find out conditions for maximizing a production efficiency, the coolers ( ) are disposed at portions of the inner sides of thermal shielding elements ( ) and the lower ends ( ) of cooling pipes are so set as to be positioned up to 150 mm high from the surface ( ) of molten silicon liquid.

Device and method for producing single-crystal ingot

Growing community of inventors

Hiratsuka, Japan

Daisuke Ebi