Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Daisuke Domon

Satoshi Watanabe

Keiichi Masunaga

Akinobu Tanaka

Jun Hatakeyama

Masaaki Kotake

Koji Hasegawa

Masaki Ohashi

Masayoshi Sagehashi

Masahiro Fukushima

Naoya Inoue

Youichi Ohsawa

Takeru Watanabe

Ratnam Sooriyakumaran

Yoshio Kawai

Daniel Sanders

Takayuki Fujiwara

Linda Karin Sundberg

Luisa Dominica Bozano

Martha Inez Sanchez

Kentaro Kumaki

Katsuya Takemura

Teppei Adachi

Kenji Yamada

Takahiro Suzuki

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Multifunctional polymers

A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 

Onium salt, negative resist composition, and resist pattern forming process

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition. 

Resist composition and resist patterning process

A novel sulfonium compound has formula (A). A positive resist composition comprising a polymer and a quencher containing the sulfonium compound is improved in resolution and LER during pattern formation and has storage stability. In formula (A), R, R, R, and Rare independently a C-Cmonovalent hydrocarbon group, p is an integer of 0-5, q is an integer of 0-5, and r is an integer of 0-4. 

Sulfonium compound, positive resist composition, and resist pattern forming process

A resist composition comprising a base polymer and a sulfonium salt of brominated indole or brominated indazole carboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Resist composition and patterning process

An onium salt of arenesulfonic acid having a bridged ring-containing group generates a bulky acid having an appropriate strength and controlled diffusion. When a positive resist composition comprising the onium salt and a base polymer is processed by lithography, a pattern of rectangular profile having high resolution and reduced LER is formed.

Onium salt, chemically amplified positive resist composition, and resist pattern forming process

A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating a brominated benzene-containing sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

A polymer comprising recurring units derived from vinylanthraquinone, recurring units containing a benzene ring having a hydroxyl-bearing tertiary alkyl group bonded thereto, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a negative resist composition having a high resolution and minimal LER.

Polymer, negative resist composition, and pattern forming process

Negative-tone resist compositions and multifunctional polymers therein

A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER.

Polymer, positive resist composition, and pattern forming process

The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition. 

Polymer compound, negative resist composition, laminate, patterning process, and compound

A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mrepresents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b),  This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

Polymer compound, positive resist composition, laminate, and resist patterning process

A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

Chemically amplified negative resist composition and patterning process

A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.

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Joetsu, Japan

Daisuke Domon