Mitsubishi Electric Corporation

Daisuke Chikamori

Nobuaki Yamanaka

Naoki Yutani

Yoshio Muto

Toru Jokaku

Takamichi Iwakawa

Shinichirou Katsuki

Yasuhiko Nishio

Provided is a method including the following steps: forming an insulating film having a thickness of 0.5 &#x3bc;m or greater on an epitaxial layer provided with a well region, a source region, and a contact region, each being an impurity diffusion region; forming, in the insulating film, an opening that has a dimension of 2 mm&#xd7;2 mm or greater in a plan view to expose at least part of the impurity diffusion region from the insulating film. The step of forming the opening in the insulating film is performed by the following separate steps: removing the insulating film so as to leave one-half or less of the thickness of the insulating film unremoved, through dry etching by the use of a photoresist; and removing the insulating film until the opening reaches the upper surface of the epitaxial layer, through wet etching by the use of the same photoresist.

Method for manufacturing semiconductor device

A resist layer is applied to a metal film disposed on a semiconductor substrate, using a positive photoresist having photosensitivity to at least one wavelength. The resist layer is exposed to light including a region of the one wavelength. The exposed resist layer is developed. After the step of developing the resist layer, the metal film is subjected to wet etching with the resist layer used as a mask, in an etching apparatus. The etching apparatus is placed in an environment irradiated with a lighting apparatus that emits light with a wavelength equal to or shorter than the one wavelength cut off.

Semiconductor device manufacturing method

Provided is a semiconductor device capable of measuring a depth of removal of a silicon carbide (SiC) wafer with high accuracy through simple steps, and a method for producing the semiconductor device. The semiconductor device according to an aspect of the present invention includes at least one evaluation element disposed on a SiC wafer. The evaluation element includes a doped region doped with a dopant on the SiC wafer, and an insulating film partially covering the doped region. The insulating film includes a plurality of partial insulating films. The doped region includes a plurality of regions sectioned by the plurality of partial insulating films in a plan view.

Semiconductor device and method for producing the same

A method for manufacturing a semiconductor device, includes: a preparation step, a flow step, and a processing step. The preparation step prepares an etching solution by dissolving titanium in an ammonia-hydrogen peroxide solution in advance before use of the ammonia-hydrogen peroxide solution for etching. The flow step flows the etching solution after the preparation step so that a concentration of the etching solution in a processing bath is constant. The processing step etches a metal film on a semiconductor wafer with the etching solution by putting in the processing bath the semiconductor wafer having a resist film and the metal film after the flow step is started. The metal film is preferably formed of titanium, and a temperature of the etching solution is preferably adjusted by flowing the etching solution so that the etching solution flows via a temperature controller.

A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.

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Tokyo, Japan

Daisuke Chikamori