Hitachi High-Tech Corporation

Hitachi, Ltd.

Hitachi-High-Technologies Corporation

Daisuke Bizen

Makoto Sakakibara

Hideyuki Kazumi

Makoto Suzuki

Hajime Kawano

Natsuki Tsuno

Yasunari Sohda

Hiroya Ohta

Toshiyuki Yokosuka

Yohei Nakamura

Satoshi Takada

Yusuke Abe

Yuzuru Mizuhara

Mayuka Osaki

Hirohiko Kitsuki

Kaori Bizen

Kaori Shirahata

Kenji Yasui

Junichi Tanaka

Muneyuki Fukuda

Minoru Yamazaki

Naomasa Suzuki

Noritsugu Takahashi

Kei Sakai

Hideo Morishita

Michio Hatano

Yoshinori Momonoi

Takafumi Miwa

Tomoyasu Shojo

Yasuhiro Shirasaki

Nobuhiro Okai

Ryota Watanabe

Minami Shouji

Yuji Kasai

Uki Ikeda

Junichi Kakuta

Ryoko Araki

Masumi Shirai

Hyejin Kim

Shota Mitsugi

Junichi Fuse

Fumiya Ishizaka

Roughness measurement corrects a machine difference utilizing first PSD data indicating power spectral density of a line pattern measured for a line pattern formed on a wafer for machine difference management by a reference machine in roughness index calculation and second PSD data indicating power spectral density of a line pattern measured for the line pattern formed on the wafer for machine difference management by a correction target machine are used to obtain a correction method for correcting the power spectral density of the second PSD data to the power spectral density of the first PSD data, power spectral density of a line pattern is measured as third PSD data from a scanning image of the line pattern, and corrected power spectral density obtained by correcting the power spectral density of the third PSD data by the obtained correction method is calculated.

Charged particle beam apparatus and method for calculating roughness index

A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m<n) while shifting the first timing with respect to the deflection signal so that a location irradiated with the charged particle beam by each scanning has different pixel coordinates. The pixel values at pixel coordinates where a signal is defective are restored.

Charged particle beam device and sample observation method

The present disclosure provides a technique enabling accurate ascertaining of a charged state of a resist pattern resulting from irradiation of a charged particle beam. The present disclosure provides a charged particle beam system provided with: a charged particle device provided with a charged particle source, deflectors for causing a primary charged particle beam emitted from the charged particle source to be scanned over a sample, an energy discriminator for performing energy discrimination for secondary electrons emitted when the primary charged particle beam has reached the sample, and a detector for detecting secondary electrons which have passed the energy discriminator; and a computer system for generating a scan image on the basis of signal amounts detected by the detector, which fluctuate during scanning of primary charged particles by the deflectors, and storing the scan image into an image storage unit. The computer system generates a scan image for each frame at the time of frame integration of the scan image, calculates an amount of static build-up in each frame on the basis of the output of the scan image of each frame, and outputs information on the amount of static build-up.

Charged particle beam system and method for determining observation conditions in charged particle beam device

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

Inspection method

An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG.).

Charged particle beam device

A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

Charged particle beam apparatus and control method

A charged particle beam device capable of generating an image having uniform image quality in a field of view is provided. The charged particle beam device includes: a beam source configured to irradiate a sample with a charged particle beam; a diaphragm including an opening used for angle discrimination of secondary charged particles emitted from the sample; a first detector provided closer to the sample than the diaphragm, and configured to detect a part of the secondary charged particles; a second detector provided closer to the beam source than the diaphragm, and configured to detect secondary charged particles passing through the opening; an image generation unit configured to generate an image based on a first signal output from the first detector or a second signal output from the second detector; and a composite ratio calculation unit configured to calculate a composite ratio for each position in a field of view based on the first signal or the second signal with respect to a calibration sample that is a sample having a flat surface. The image generation unit generates a composite image by synthesizing the first signal and the second signal with respect to an observation sample using the composite ratio.

The purpose of the present invention is to provide a charged-particle beam apparatus capable of performing various types of signal discriminations according to the shape and the size of a sample. The present invention proposes a charged-particle beam apparatus for irradiating a sample disposed in a vacuum vessel with a charged particle beam. The charged-particle beam apparatus is provided with: a first light-generating surface for generating light on the basis of the collision of charged particles released from the sample; a light-guiding member for guiding the generated light to the outside of the vacuum vessel while maintaining the generation distribution of the light generated at the first light-generating surface; a photodetector for detecting the light guided by the light-guiding member to the outside of the vacuum vessel; and a light-transmission restricting member for restricting transmission of the light guided by the light-guiding member between the photodetector and the light-guiding member.

Charged-particle beam apparatus

To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.

Charged particle beam apparatus

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron sourcethat emits a primary electron, a sample stageon which a sample is placed, a deflectorthat causes the sample to be scanned with the primary electron, an objective lensthat focuses the primary electron on the sample, and a detectorthat detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.

Scanning electron microscope and sample observation method using scanning electron microscope

The present invention provides an electron beam device suitable for observing the bottom of a deep groove or a deep hole with a high degree of accuracy under a large current condition. The electron beam device has: an electron optical system having an irradiation optical system to irradiate an aperturewith an electron beamemitted from an electron sourceand a reduction projection optical system to project and form an aperture image of the aperture on a sample; and a control unitto control a projection magnification of the aperture image of the aperture projected and formed on the sample and an aperture angleof the electron beam emitted to the sample by the electron optical system.

Electron beam device

A scanning microscope includes: a charged particle beam source configured to output a charged particle beam to be emitted to a sample; a detector configured to detect charged particles from the sample; and a controller configured to control the charged particle beam source and the detector, wherein the controller changes one or more variable parameters to determine a plurality of different parameter value sets, acquires a measurement result of a temporal change of absorption current in a target sample material under each of the plurality of different parameter value sets, and, based on the measurement results, selects a parameter value set for use in measurement of the target sample from the plurality of different parameter value sets.

Scanning microscope with controlled variable measurement parameters

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lensprimary electron acceleration meansthat accelerates primary electronsprimary electron deceleration meansthat decelerates the primary electrons and irradiates them to a samplea secondary electron deflectorthat deflects secondary electronsfrom the sample to the outside of an optical axis of the primary electrons; a spectroscopethat disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

Growing community of inventors

Tokyo, Japan

Daisuke Bizen