Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Daisaku Okamoto

Naoki Saka

Hideki Tanaka

Yuji Ibusuki

There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Field-effect transistor, method of manufacturing the same, and radio-frequency device

To provide a semiconductor device capable of reducing a parasitic capacitance, securing high reliability, and suppressing an increase in manufacturing cost. A semiconductor device is provided which includes a substrate including an embedded insulation film and a semiconductor layer on the embedded insulation film and on which a semiconductor element is formed and a gate electrode on the semiconductor layer, in which the gate electrode includes a band-shaped first electrode portion that extends from a center portion of the semiconductor layer and beyond an end of the semiconductor layer along a first direction in a case where the substrate is viewed from above, and in a cross section in a case where the first electrode portion and the substrate are cut along the first direction, a film thickness of the end of the semiconductor layer is thicker than a film thickness of the center portion of the semiconductor layer.

Growing community of inventors

Kagoshima, Japan

Daisaku Okamoto