Asahi Kasei Microdevices Corporation

Daiki Yasuda

Hiromi Fujita

Takaaki Furuya

Osamu Morohara

Provided is an infrared optical device that is easy to produce and has high performance. The infrared optical device having a peak at a center wavelength λ includes: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer, an active layer, a p-type semiconductor layer, and a first electrode layer formed on the semiconductor substrate in stated order. The first reflecting layer and the p-type semiconductor layer are directly connected to the active layer. The first reflecting layer is constructed through layering of a low-refractive-index layer that is an n-type semiconductor layer and a high-refractive-index layer. The low-refractive-index layer is placed closest to the active layer in the first reflecting layer. The active layer and the p-type semiconductor layer each have a higher refractive index than the low-refractive-index layer. The center wavelength λ is 7 μm or more at room temperature.

Infrared optical device

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.

Provided is an optical element, in which: an internal wiring portion electrically connects a first contact electrode portion and a second contact electrode portion to each other; a second region, an active layer and a second conductive semiconductor layer form a mesa structure; a pad electrode is placed so as to cover a plurality of unit elements, and is electrically connected to at least one of the first contact electrode portion and the second contact electrode portion; a first insulating portion is placed between the pad electrode and a first region of a side surface of a mesa structure and a first conductive semiconductor layer; and a diameter of a circle circumscribed to a region where the pad electrode and a connection portion are in contact with each other is 15% or more of a length of a short side of a substrate.

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Tokyo, Japan

Daiki Yasuda